High-performance photovoltaic infrared devices in Hg1−<i>x</i>Cd<i>x</i>Te on GaAs

Gertner, E. R.; Shin, Seung Heon; Edwall, D. D.; Bubulac, L. O.; Lo, D. S.; Tennant, W. E.

doi:10.1063/1.95861

Cited by 28 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Cadmium telluride (CdTe) is now one of the most known II-VI semiconductor materials used for the application in infrared and X-ray imaging systems, in solar cells and in optical devices suitable for the telecommunication industry [1][2][3][4][5]. Largely, the majority of known and potential applications rely on the CdTe layers, which are produced on various substrates.…”

Section: Introductionmentioning

confidence: 99%

Sub-bandgap photoluminescence from as-grown and annealed layers of CdTe

Sochinskii¹,

Abellán²,

Rodrı́guez-Fernández³

et al. 2009

Superlattices and Microstructures

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Sub-bandgap photoluminescence from as-grown and annealed layers of CdTe

Sochinskii¹,

Abellán²,

Rodrı́guez-Fernández³

et al. 2009

Superlattices and Microstructures

View full text Add to dashboard Cite

“…They also showed [56] that this CdTe/AI203 substrate can be used to fabricate device-quality layers by isothermal vapourphase epitaxy. The performance of the photodiodes with Xc = 4.95 ~tm for the MWIR region was similar to those on bulk or LPE materials [54].…”

Section: The History Of Isovpementioning

confidence: 99%

“…In 1984 a group of researchers from the Rockwell International Science Center (S. H. Shin, E. R. Gertner, J. G. Pasko, W. E. Tennant) [54][55][56][57] developed a method to obtain device-quality I-Ig~ _~Cd~Te epitaxial layers using open-tube ISOVPE. The ISOVPE system used in the works of this group was a modification of the vertical open system used in LPE.…”

Section: The History Of Isovpementioning

confidence: 99%

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.

show abstract

“…Because of chemical compatibility and the close lattice match with Hg x Cd 1-x Te, which is presently the most important material for infrared (IR) photodetectors, CdTe is also an ideal substrate for the epitaxial growth of high-quality Hg x Cd 1-x Te. 1 In recent years, CdTe heteroepitaxial layers on Si substrates have been considered as promising alternative substrates for the subsequent growth of Hg x Cd 1-x Te over relatively expensive conventional bulk CdZnTe substrates. There are several reasons why there has been much interest in the use of silicon as a base substrate for the epitaxial growth of Hg x Cd 1-x Te/CdTe multilayer structures.…”

Section: Introductionmentioning

confidence: 99%

Optical and microstructural characterization of the effects of rapid thermal annealing of CdTe thin films grown on Si (100) substrates

Neretina

Sochinskii

Mascher

2005

Journal of Elec Materi

View full text Add to dashboard Cite

The effects of rapid thermal annealing (RTA) on CdTe/Si (100) heterostructures have been studied in order to improve the structural quality of CdTe epilayers. Samples of CdTe (111) polycrystalline thin films grown by vapor phase epitaxy (VPE) on Si (100) substrates have been investigated. The strained structures were rapidly thermally annealed at 400°C, 450°C, 500°C, 550°C, and 600°C for 10 sec. The microstructural properties of the CdTe films were characterized by carrying out scanning electron microscopy (SEM), x-ray diffraction (XRD), and atomic force microscopy (AFM). We have shown that the structural quality of the CdTe epilayers improves significantly with increasing annealing temperature. The optimum annealing temperature resulting in the highest film quality has been found to be 500°C. Additionally, we have shown that the surface nucleation characterized by the island size distribution can be correlated with the crystalline quality of the film.

show abstract

High-performance photovoltaic infrared devices in Hg1−xCdxTe on GaAs

Cited by 28 publications

References 15 publications

Sub-bandgap photoluminescence from as-grown and annealed layers of CdTe

Sub-bandgap photoluminescence from as-grown and annealed layers of CdTe

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Optical and microstructural characterization of the effects of rapid thermal annealing of CdTe thin films grown on Si (100) substrates

Contact Info

Product

Resources

About