Sub-bandgap photoluminescence from as-grown and annealed layers of CdTe

Sochinskii, N.V.; Abellán, Manuel; Rodrı́guez-Fernández, Jonathan; Diéguez, E.; Franc, J.; Hlı́dek, P.; Praus, Petr; Babentsov, V.

doi:10.1016/j.spmi.2008.12.025

Cited by 4 publications

(2 citation statements)

References 25 publications

(32 reference statements)

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“…It was reported that the PL intensity of the 1.42 eV band in CdTe/Si decreases sublinearly with the excitation intensity, while this dependence for the 1.47 eV band in CdTe/Si is superlinear. 10) Our result is reasonable in this assignment.…”

Section: Resultssupporting

confidence: 75%

See 1 more Smart Citation

Effect of Heat Treatment on 1.47 eV Band in CdTe Films on GaAs(100) Substrates

Onodera

Yoshida

Taguchi

2010

Jpn. J. Appl. Phys.

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A dynamic two-dimensional arc model has been used to investigate the effects of the various forces acting on the droplet in gas metal arc welding (GMAW). The model is based on the equations of conservation of mass, energy, momentum and current, Ohm's law and a Maxwell equation. The model treats the welding wire, the plasma and the workpiece. For molten metal droplets at the tip of the welding wire, we account for effects of inertia, gravity, surface tension, magnetic force, viscous drag force and arc pressure. Calculations are presented for a 1.6 mm diameter wire of mild steel for arcs in argon to determine the separate effects of these forces on droplet formation. It is found that, for arcs in pure argon at currents around the transition from the globular transfer mode to the spray transfer mode, viscous drag and arc pressure effects are approximately self-cancelling. It is also found that j z × B forces have a much larger effect than do j r × B forces on the transition from globular to spray modes of metal transfer.

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Section: Resultssupporting

confidence: 75%

“…It was reported that the 1.47 eV band in CdTe films on Si substrates disappeared with thermal annealing at 500 C. 10) This suggests that dislocations or extended defects can be annealed at 500 C. Therefore, the crystalline structure of CdTe is improved by thermal annealing.…”

Section: Introductionmentioning

confidence: 99%