High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Hoang, A. M.; Chen, G.; Chevallier, Romain; Haddadi, Abbas; Razeghi, Manijeh

doi:10.1063/1.4884947

Cited by 70 publications

(36 citation statements)

References 22 publications

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“…This G-R current arises from a low Shockley-ReadHall (SRH) carrier lifetime [3][4][5], which is currently attributed to native defects in the GaSb layer [6]. The InAs-InAsSb (Ga-free) SL was developed to avoid the low lifetimes associated with the GaSb layer, and has shown significant improvement in SRH carrier lifetimes [7][8][9][10]. This is expected to result in improved performance in infrared detectors made from this material.…”

Section: Introductionmentioning

confidence: 97%

Growth of InAs–InAsSb SLS through the use of digital alloys

Schuler-Sandy

Klein

Casias

et al. 2015

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 97%

Growth of InAs–InAsSb SLS through the use of digital alloys

Schuler-Sandy

Klein

Casias

et al. 2015

Journal of Crystal Growth

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“…Nevertheless, much progress has been made in recent years in the development of VLWIR SLS FPAs. For example, as shown Figure 9, a type II InAs/InAsSb VLWIR FPA grown on a GaSb substrate was reported in 2017 that produced sharp thermal images [64], and another recently that exhibited peak responsivity of 4.8 A/W and detectivity of 1.4 × 10 10 Jones [65]. Potential applications of VLWIR detection and imaging include long-range ballistic missile defense, space-based astronomy, space-borne remote sensing, remote pollution monitoring, and meteorological monitoring [66,67].…”

Section: Very Long-wavelength Infrared (Vlwir)mentioning

confidence: 99%

“…(a) Thermal image acquired from 320 × 256 VLWIR FPA at 65 K, in which mirror image can be seen reflected on the surface of a desk [64]. (b) Quantum efficiency spectrum with varying bias at 77 K; inset shows 50% cutoff wavelength versus temperature [65].…”

Section: Sls Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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“…In comparison to HgCdTe, SLS structures can be deposited on inexpensive substrates, do not require extensive safety modifications for the deposition of mercury, and can take advantage of commercial foundries. As a result, multiple academic [1][2][3], industrial [4,5], and government groups [6][7][8][9] have researched these structures using molecular beam epitaxy (MBE). The original structures consisted of InAs/InGaSb [10], which were followed by gallium-free designs (InAs/InAsSb) [1].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE

et al. 2016

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Strained-layer superlattices (SLSs) are an active research topic in the molecular beam epitaxy (MBE) and infrared focal plane array communities. These structures undergo a >500 K temperature change between deposition and operation. As a result, the lattice constants of the substrate and superlattice are expected to change by approximately 0.3%, and at approximately the same rate. However, we present the first temperature-dependent X-ray diffraction (XRD) measurements of SLS material on GaSb and show that the superlattice does not contract in the same manner as the substrate. In both InAs/InAs 0.65 Sb 0.35 and In 0.8 Ga 0.2 As/InAs 0.65 Sb 0.35 SLS structures, the apparent out-of-plane strain states of the superlattices switch from tensile at deposition to compressive at operation. These changes have ramifications for material characterization, defect generation, carrier lifetime, and overall device performance of superlattices grown by MBE.

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High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Cited by 70 publications

References 22 publications

Growth of InAs–InAsSb SLS through the use of digital alloys

Growth of InAs–InAsSb SLS through the use of digital alloys

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE

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