High-performance photodetector using urchin-like hollow spheres of vanadium pentoxide network device

Shafique, Shareen; Yang, Shuming; Wang, Yiming; Woldu, Yonas Tesfaye; Cheng, Biyao; Ji, Peirui

doi:10.1016/j.sna.2019.07.003

Cited by 30 publications

(17 citation statements)

References 37 publications

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“…In summary, the Schottky photodetector with a GdIG interlayer shows superior photoresponse behaviors, such as high specific detectivity (>10 13 ), a large light/dark current ratio (>10 6 ), broadband weak-light absorption, and good stability. A comparison is made between previously reported Schottky junction photodetectors with different interlayers, substrates, 2D materials, or basic structures 3 , 8 , 12 , 20 – 30 . This novel photodetector exhibits the advantages of high specific detectivity and a large light/dark current ratio at 633 nm under zero bias (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Photodetectors with high detectivity and large on-off ratios have urgent market demand in the field of weak-signal detection, remote sensing, and optical communications 1 – 3 . Graphene, a typical representative 2D material, has ultrahigh carrier mobility at room temperature, a broadband absorption spectrum, and a flexible band structure, holding attractive advantages over conventional semiconductor materials 4 , 5 .…”

Section: Introductionmentioning

confidence: 99%

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High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

Yang

Wang

et al. 2022

Microsyst Nanoeng

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Graphene/silicon Schottky junctions have been proven efficient for photodetection, but the existing high dark current seriously restricts applications such as weak signal detection. In this paper, a thin layer of gadolinium iron garnet (Gd3Fe5O12, GdIG) film is introduced to engineer the interface of a graphene/silicon Schottky photodetector. The novel structure shows a significant decrease in dark current by 54 times at a −2 V bias. It also exhibits high performance in a self-powered mode in terms of an Ilight/Idark ratio up to 8.2 × 106 and a specific detectivity of 1.35 × 1013 Jones at 633 nm, showing appealing potential for weak-light detection. Practical suitability characterizations reveal a broadband absorption covering ultraviolet to near-infrared light and a large linear response with a wide range of light intensities. The device holds an operation speed of 0.15 ms, a stable response for 500 continuous working cycles, and long-term environmental stability after several months. Theoretical analysis shows that the interlayer increases the barrier height and passivates the contact surface so that the dark current is suppressed. This work demonstrates the good capacity of GdIG thin films as interlayer materials and provides a new solution for high-performance photodetectors.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

Yang

Wang

et al. 2022

Microsyst Nanoeng

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“…Among them, layered vanadium pentoxide (V 2 O 5 ) is thermodynamically the most stable oxide, which possesses the highest oxidation valence state among all vanadium oxides [ 2 ]. The rich crystallinity and morphology have made V 2 O 5 a very interesting material for a broad range of applications, which include field emission [ 3 , 4 ], supercapacitor [ 5 , 6 ], lithium battery [ 7 ], transistor [ 8 ], and photodetector [ 9 , 10 , 11 , 12 , 13 , 14 , 15 ]. It is worth mentioning that V 2 O 5 is a promising n-type semiconductor for photodetection due to its direct band gap of 2.2 to 2.7 eV [ 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Facile Synthesis of Two Dimensional (2D) V2O5 Nanosheets Film towards Photodetectors

Wang

Zhang

et al. 2022

Materials

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Most of the studies focused on V2O5 have been devoted to obtaining specific morphology and microstructure for its intended applications. Two dimensional (2D) V2O5 has the most valuable structure because of its unique planar configuration that can offer more active sites. In this study, a bottom-up and low-cost method that is hydrothermal combined with spin-coating and subsequent annealing was developed to prepare 2D V2O5 nanosheets film on quartz substrate. First, VOOH nanosheets were prepared by the hydrothermal method using V2O5 powders and EG as raw materials. Further, V2O5 nanosheets with an average lateral size over 500 nm and thickness less than 10 nm can be prepared from the parent VOOH nanosheets by annealing at 350 °C for 15 min in air. The prepared V2O5 nanosheets film was assembled of multiple nanosheets. The structural, morphological, microstructural and optical properties of the films were respective investigated by XRD, SEM, TEM and UV-Vis. The photodetector based on V2O5 nanosheets film shows good photoresponse with a response time of 2.4 s and a recovery time of 4.7 s.

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“…This unique structure can provide more electronic paths in the MoS 2 Se 2− x /Si PD, which is similar to the network device structure. 38 Furthermore, the Raman spectra of the as-synthesized MoS x Se 2− x nanosheets are shown in Fig. 2(b) excited using a 532 nm laser under an ambient environment.…”

Section: Resultsmentioning

confidence: 99%

An ultrafast and self-powered MoS_xSe_2−x/Si photodetector with high light-trapping structures and a SiO_x interface layer

Yue,

Shen,

Wang

et al. 2023

Nanoscale

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High-performance photodetector using urchin-like hollow spheres of vanadium pentoxide network device

Cited by 30 publications

References 37 publications

High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

Facile Synthesis of Two Dimensional (2D) V2O5 Nanosheets Film towards Photodetectors

An ultrafast and self-powered MoS_xSe_2−x/Si photodetector with high light-trapping structures and a SiO_x interface layer

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High-performance photodetector using urchin-like hollow spheres of vanadium pentoxide network device

Cited by 30 publications

References 37 publications

High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

Facile Synthesis of Two Dimensional (2D) V2O5 Nanosheets Film towards Photodetectors

An ultrafast and self-powered MoSxSe2−x/Si photodetector with high light-trapping structures and a SiOx interface layer

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Product

Resources

About

An ultrafast and self-powered MoS_xSe_2−x/Si photodetector with high light-trapping structures and a SiO_x interface layer