High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

Abstract

Graphene/silicon Schottky junctions have been proven efficient for photodetection, but the existing high dark current seriously restricts applications such as weak signal detection. In this paper, a thin layer of gadolinium iron garnet (Gd3Fe5O12, GdIG) film is introduced to engineer the interface of a graphene/silicon Schottky photodetector. The novel structure shows a significant decrease in dark current by 54 times at a −2 V bias. It also exhibits high performance in a self-powered mode in terms of an Ilight/Idark ratio up to 8.2 × 106 and a specific detectivity of 1.35 × 1013 Jones at 633 nm, showing appealing potential for weak-light detection. Practical suitability characterizations reveal a broadband absorption covering ultraviolet to near-infrared light and a large linear response with a wide range of light intensities. The device holds an operation speed of 0.15 ms, a stable response for 500 continuous working cycles, and long-term environmental stability after several months. Theoretical analysis shows that the interlayer increases the barrier height and passivates the contact surface so that the dark current is suppressed. This work demonstrates the good capacity of GdIG thin films as interlayer materials and provides a new solution for high-performance photodetectors.

High-Photoresponse and Broad-Band Graphene/WS2/Porous-Si Heterostructure Photodetectors

“…The degradation rate of the PD after the 2000 h stability test is about 20%, as shown in Figure b. The figures of merit achieved from the GR/WS 2 /PSi PDs are comparable to or even larger than previously reported results, as shown in Table . ,,− ,− Based on these discussion, the GR/WS 2 /PSi heterostructures are believed to be useful for advanced broad-band PDs with large R , short response time, and high stability in the visible region.…”

Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%

“…For completeness, it is noteworthy that the advanced b ‐Si PIN photodiode has a nanosecond rise time. [ 16 ] On the other hand, while various factors such as the incident wavelength and the light power may influence the measured rise time, the response speed demonstrated herein is nevertheless comparatively fast among the reported self‐biased Si heterojunction photodiodes: ≈140 µs rise time for MXene/Si heterojunction at 532 nm wavelength, [ 1 ] ≈150 µs rise time for graphene/Si heterojunction at 633 nm wavelength, [ 49 ] ≈20 µs rise time for n‐Si/p‐GaTe heterojunction, [ 50 ] and ≈1 ms rise time for Si/perovskite heterojunction. [ 51 ] The stability in the temporal response over a large time scale of 100 ms is illustrated in Figure S13 in the Supporting Information for 515 and 1060 nm wavelengths.…”

Role of Defects in the Transport Properties and Photoresponse of a Silicon–MoS2 Mixed-Dimensional Van der Waals Heterostructure

“…This value is much higher than that of an ideal diode ( n = 1). Van der Waals heterostructures with trap states at the interface usually exhibit high ideality factors. ,, Often, these interface states are present due to structural defects or sulfur vacancies in CVD-grown MoS 2 , or any non-ideality of the silicon surface, and so forth.…”