High‐Performance Photo‐Electrochemical Photodetector Based on Liquid‐Exfoliated Few‐Layered InSe Nanosheets with Enhanced Stability

Abstract

The band gap of few‐layered 2D material is one of the significant issues for the application of practical devices. Due to the outstanding electrical transport property and excellent photoresponse, 2D InSe has recently attracted rising attention. Herein, few‐layered InSe nanosheets with direct band gap are delivered by a facile liquid‐phase exfoliation approach. We have synthesized a photoelectrochemical (PEC)‐type few‐layered InSe photodetector that exhibits high photocurrent density, responsivity, and stable cycling ability in KOH solution under the irradiation of sunlight. The detective ability of such PEC InSe photodetector can be conveniently tuned by varying the concentration of KOH and applied potential suggesting that the present device can be a fitting candidate as an excellent photodetector. Moreover, extendable optimization of the photodetection performance on InSe nanosheets would further enhance the potential of the prepared InSe in other PEC‐type devices such as dye‐sensitized solar cells, water splitting systems, and solar tracking equipment.

Tunable self‐powered n‐SrTiO3 photodetectors based on varying CuS‐ZnS nanocomposite film (p‐CuZnS, p‐CuS, and n‐ZnS)

“…Therefore, the p‐CZS/n‐STO photodetector with high performance can be maintained for several months in the surrounding environment. As compared with two‐dimensional materials (black phosphorus and InSe nanosheets), the p‐CZS/n‐STO device show better stability and simpler preparation …”

A Robust 2D Photo‐Electrochemical Detector Based on NiPS3 Flakes

“…[24,25,29] In Figure 3a, the indium tin oxide (ITO) electrode received photo generated electrons from the NiPS 3 flakes when they absorbed light. Notably, although their low carrier migration velocity in electrolyte solution can cause low responsivities in photoelectrochemical devices, the unique design makes these PEC-type photodetectors more www.advelectronicmat.de advantageous over the solid or film photodetectors such as Schottky-contact-based devices and FET-based devices.…”

“…Other photocurrent densities were 1.74, 4.90, 23.83, and 68.41 µA cm −2 at 0.2, 0.4, 0.6, and 0.8 V, respectively. [25] So the response time of device can be optimized by changing its work condition. Figure 5c www.advelectronicmat.de Figure 5d shows the response time interval (t res ) from 10% to 90% of the peak and the recovery time interval (t rec ) from 90% to 10% of the peak.…”

“…Here, electrochemical cathodic exfoliation was used to fabricate large ultrathin NiPS 3 PEC photodetectors that exhibited photocurrent signals up to 724 nA cm −2 at 0 V bias potential, which is much larger than that of BP (265 nA cm −2 ), [24] InSe (15.9 nA cm −2 ) [25] and Te (5.09 nA cm −2 ). [26] It was stable for more than 24 h, with a slight reduction from 396.2 to 328.3 nA cm −2 .…”

Epitaxial Growth of Topological Insulators on Semiconductors (Bi2Se3/Te@Se) toward High‐Performance Photodetectors

“…Table illustrates the comparison of the Bi 2 Se 3 /Te@Se‐based PDs with the previously reported PEC or FET‐type PDs to further evaluate the performance of the as‐prepared PDs. It can be seen that the PDs, prepared in this work, show higher P ph and R ph compared with the BP, Te, Se, Te@Se, and InSe‐based PEC‐type PDs. Besides, the Bi 2 Se 3 /Te@Se‐based PDs can operate in HCl electrolyte, which was hardly found in the previously reported PEC‐type PDs.…”