High Performance of Ultralow Temperature Polycrystalline Silicon Thin Film Transistor on Flexible Metal Foil Substrate

Abstract

A high performance ultralow temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) was obtained on a flexible metal foil substrate using the optimization of a benzocyclobutene (BCB) planarization process for a rough flexible metal foil substrate surfaces, the high quality SiO2 interface layer formation between the gate dielectric film and the poly-Si film using plasma oxidation, and a successful crystallization of large grain poly-Si films with a sequential lateral solidification (SLS) method. High performances with field effect mobilities of 196 and 95 cm2 V-1 s-1, threshold voltages of 1.6 and -1.5 V and sub-threshold swings of 0.53 and 0.45 V/decade were obtained for n-channel metal–oxide–semiconductor (nMOS) and p-channel metal–oxide–semiconductor (pMOS) TFT on flexible metal foil substrate, respectively.

Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

“…However, with the requirement for flexible [1] and foldable [2] displays, it is natural that the Active Matrix Organic Light Emitting Diode (AMOLED) would be developed. To make a more precise high resolution display, it is necessary that innovative material TFTs possess high field effect mobility [3] and low leakage current [4].…”