Gettering of Ni silicide to minimize the leakage current in metal-induced crystallized polycrystalline silicon thin-film transistors

Byun, Chang Woo; Son, Se Wan; Lee, Yong Woo; Kang, Hyun Mo; Park, Seol Ah; Lim, Woo Hyun; Li, Tao; Joo, Seung Ki

doi:10.1007/s13391-012-2001-6

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…5) The remaining impurities in the Si that is purified using FM are trapped at the grain boundaries (GBs) and on the Si surface. 3,6) However, these trapped impurities can be easily removed by etching. [7][8][9][10][11][12][13][14][15][16] Combining FM with acid-leaching was attempted for the first time here in order to purify MG-Si.…”

Section: Introductionmentioning

confidence: 99%

Effect of Heating Rate on the Refining of Metallurgical-Grade Silicon during Fractional Melting

Chung¹,

Lee²,

Yoon³

2013

Jpn. J. Appl. Phys.

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Silicon was purified using fractional melting (FM), which is a more effective refining method than fractional solidification. Changes in the silicon microstructure during FM were observed using a scanning electron microscope (SEM) and an electron probe microanalyzer (EPMA). Purity of each sample was investigated using inductively coupled plasma atomic emission spectrometry (ICP-AES) to determine the effects of various heating rates on the efficiency of FM. A refining ratio of 97.28% was the best result that could be obtained for the sample that was heated at a rate of 15 °C/min. For the samples that were heated below 1390 °C lower heating rate resulted in higher refining efficiency. Acid-leaching yielded 99.98% pure silicon samples after FM.

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Section: Introductionmentioning

confidence: 99%

Effect of Heating Rate on the Refining of Metallurgical-Grade Silicon during Fractional Melting

Chung¹,

Lee²,

Yoon³

2013

Jpn. J. Appl. Phys.

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“…Several crystallization methods have been utilized to reduce the unwanted Ni precipitates, such as metal-induced lateral crystallization (MILC), [3][4][5][6][7] the application of a MIC through capping-layer (SiN x , SiO 2 ), 8) and the gettering of Ni. 9,10) However, these methods are complicated, and require high process temperatures and very long process time, which can damage the poly-Si active layer. In order to fabricate high-performance poly-Si TFTs by reducing Ni contaminations, silicide seed-induced crystallization (SIC) was studied using in-situ silicidation during Ni deposition, in which the Ni was deposited by sputtering at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Leakage Current Suppression on Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors by Asymmetrically Deposited Nickel

Byun¹,

Son²,

Lee³

et al. 2013

Jpn. J. Appl. Phys.

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The electrical performance of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC) is greatly affected by metal catalyst contaminations, such as Ni and Ni silicide trapped in the channel, since they concentrate in front of laterally grown crystallites. In the present work, the effect of the MILC/MILC boundary (MMB) on MILC polycrystalline silicon (poly-Si) TFTs is investigated by the comparison of MILC poly-Si TFTs with MMB at the center of the channel, and equivalent TFTs with MMB at a position ejected from the channel. The MMB location was controlled by the Ni catalyst position. Both a low off-state leakage current and a free from short channel effect (kink effect) were observed in high electric-field conditions. Furthermore, the field-effect mobility and drain current noise were drastically improved by ejecting the MILC boundary in the source direction.

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3-D Observation of dopant distribution at NAND flash memory floating gate using Atom probe tomography

Lee

Chae

Kim

et al. 2015

Electron. Mater. Lett.

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Gettering of Ni silicide to minimize the leakage current in metal-induced crystallized polycrystalline silicon thin-film transistors

Cited by 6 publications

References 9 publications

Effect of Heating Rate on the Refining of Metallurgical-Grade Silicon during Fractional Melting

Effect of Heating Rate on the Refining of Metallurgical-Grade Silicon during Fractional Melting

Leakage Current Suppression on Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors by Asymmetrically Deposited Nickel

3-D Observation of dopant distribution at NAND flash memory floating gate using Atom probe tomography

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