High performance of polyimide/CaCu3Ti4O12@Ag hybrid films with enhanced dielectric permittivity and low dielectric loss

Yang, Yang; Sun, Haoliang; Yin, Da‐Chuan; Lu, Zhihong; Wei, Jianhong; Xiong, Rui; Shi, Jing; Wang, Ziyu; Liu, Zhengyou; Liu, Qingquan

doi:10.1039/c4ta05673f

Cited by 101 publications

(62 citation statements)

References 47 publications

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“…In addition, the surface area-volume ratio of submicron CCTO powder is 88,737 cm 2 /cm 3 , much larger than 13,425 cm 2 /cm 3 of micron CCTO powder. The stronger interfacial polarization mostly caused by the large specific surface area also contributes to the high permittivity [21,26].…”

Section: Resultsmentioning

confidence: 99%

“…To develop applications for CCTO, scholars aim to minimize the high dielectric loss [17][18][19]. Simultaneously, attempts have been made to explore the possibility of obtaining high dielectric permittivity composites for potential electronic components by embedding CCTO particles into polymer [20][21][22][23]. Dang [24] utilized in situ polymerization to disperse CCTO powders into a polyimide matrix and obtained a composite film with a dielectric permittivity of 49 when the volume fraction was 40 vol % at 100 Hz.…”

Section: Introductionmentioning

confidence: 99%

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Microstructure and Dielectric Properties of PTFE-Based Composites Filled by Micron/Submicron-Blended CCTO

Xie

Liang

et al. 2017

Crystals

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This paper investigated a polymer-based composite by homogeneously embedding calcium copper titanate (CaCu 3 Ti 4 O 12 ; CCTO) fillers into a polytetrafluoroethylene matrix. We observed the composite filled by CCTO powder at different sizes. The particle size effects of the CCTO filling, including single-size particle filling and co-blending filling, on the microstructure and dielectric properties of the composite were discussed. The dielectric performance of the composite was investigated within the frequency range of 100 Hz to 1 MHz. Results showed that the composite filled by micron/submicron-blended CCTO particles had the highest dielectric constant (ε r = 25.6 at 100 Hz) and almost the same dielectric loss (tanδ = 0.1 at 100 Hz) as the composite filled by submicron CCTO particles at the same volume percentage content. We researched the theoretical reason of the high permittivity and low dielectric loss. We proved that it was effective in improving the dielectric property of the polymer-based composite by co-blending filling in this experiment.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Microstructure and Dielectric Properties of PTFE-Based Composites Filled by Micron/Submicron-Blended CCTO

Xie

Liang

et al. 2017

Crystals

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“…Moreover, their conductivities were 10 −10 S/m at 10 Hz, which demonstrates that they were good insulators. 7,14,18 In addition, the conductivities of PVDF and PVDF#0 increased dramatically with increasing frequency.…”

Section: B Dielectric Properties Of Pvdf and The Untreated Pvdf Compmentioning

confidence: 98%

“…15,16 Because improving the dispersion of fillers in polymer matrix can improve the dielectric permittivity of ceramics/polymer composites, many methods have been studied to modify the surface of pertinent ceramic particles. 9,[16][17][18][19] For example, Rajesh et al 17 synthesized epoxy-resin composites with a 30 vol.% Ag-coated Al 2 O 3 ceramic filler, which displayed a high dielectric permittivity of 370 at 1 MHz. Yang et al 18 synthesized a kind of functional CCTO@Ag ceramic particles, namely, Ag was deposited on the surface of CCTO nanoparticle, and obtained a high dielectric permittivity of 103 for PI/CCTO@Ag composite material with a 3 vol% CCTO@Ag loading.…”

Section: Introductionmentioning

confidence: 99%

“…9,[16][17][18][19] For example, Rajesh et al 17 synthesized epoxy-resin composites with a 30 vol.% Ag-coated Al 2 O 3 ceramic filler, which displayed a high dielectric permittivity of 370 at 1 MHz. Yang et al 18 synthesized a kind of functional CCTO@Ag ceramic particles, namely, Ag was deposited on the surface of CCTO nanoparticle, and obtained a high dielectric permittivity of 103 for PI/CCTO@Ag composite material with a 3 vol% CCTO@Ag loading. However, this improvement in dielectric permittivity is still far from satisfactory; ideally, the improvement would be several orders of magnitudes at a relatively low volume-fraction loading, perhaps even below the percolation threshold in percolation composites.…”

Section: Introductionmentioning

confidence: 99%

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Effects of magnetic field treatment on dielectric properties of CCTO@Ni/PVDF composite with low concentration of ceramic fillers

et al. 2015

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Using melt mixing, we produced a ceramic/polymer composite with a matrix of polyvinylidene fluoride (PVDF) and a filler of 5 vol.% Ni-deposited CaCu3Ti4O12 core-shell ceramic particles (CCTO@Ni), and studied its prominent dielectric characteristics for the first. Its phase composition and morphology were analyzed by X-ray diffraction and scanning electron microscopy, respectively. After treating the composite films with various durations of a magnetic field treatment, we compared their dielectric properties. We found that the CCTO@Ni ceramic had a typical urchin-like core-shell structure, and that different durations of the magnetic field treatment produced different distributions of ceramic particles in the PVDF matrix. The dielectric permittivity of the untreated CCTO@Ni/PVDF composite was 20% higher than that of neat PVDF, and it had a low loss tangent. However, only the composite treated for 30 min in the magnetic field had an ultra-high dielectric permittivity of 1.41 × 104 at 10 Hz, three orders of magnitude higher than the untreated composite, which declined dramatically with increasing frequency, accompanied by an insulating-conducting phase transition and an increase in loss tangent. Our results demonstrate that changes in the dielectric properties of PVDF composites with magnetic field treatment are closely related to the percolation effect and interfacial polarization.

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Network Structure Modification‐Enabled Hybrid Polymer Dielectric Film with Zirconia for the Stretchable Transistor Applications

Kim

Hur

Kim

et al. 2020

Adv Funct Materials

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Stretchable electronic devices should be enabled by the smart design of materials and architectures because their commercialization is limited by the tradeoff between stretchability and electrical performance limits. In this study, thin‐film transistors are fabricated using strategies that combine the unit process of a novel hybrid gate insulator and low‐temperature indium gallium tin oxide (IGTO) channel layer and a stress‐relief substrate structure. Novel hybrid dielectric films are synthesized and their molecular structural configurations are analyzed. These films consist of a polymer [poly(4‐vinylphenol‐co‐methylmethacrylate)], cross‐linkers having different binding structures [1,6‐bis(trimethoxysilyl)hexane (BTMSH), dodecyltrimethoxysilane, and poly(melamine‐co‐formaldehyde)], and an inorganic zirconia component (ZrOx). The hybrid film with BTMSH cross‐linker and 0.2 M ZrOx exhibits excellent insulating properties as well as mechanical stretchability. IGTO transistors fabricated on polyimide‐coated glass substrates are transferred to the rubber substrate to offer stretchability of the transistor pixelated thin‐film transistors. IGTO transistors fabricated on stretchable substrates using these strategies show promising electrical performance and mechanical durability. After 200 stretchability test cycles under uniaxial elongation of approximately 300%, the IGTO transistor still retains a high carrier mobility of 21.7 cm2 V−1 s−1, a low sub‐threshold gate swing of 0.68 V decade−1 and a high ION/OFF ratio of 2.0 × 107.

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High performance of polyimide/CaCu₃Ti₄O₁₂@Ag hybrid films with enhanced dielectric permittivity and low dielectric loss

Abstract: This work reports the excellent dielectric properties of polyimide (PI) embedded with CaCu3Ti4O12(CCTO)/Ag nanoparticles (CCTO@Ag).

Cited by 101 publications

References 47 publications

Microstructure and Dielectric Properties of PTFE-Based Composites Filled by Micron/Submicron-Blended CCTO

Microstructure and Dielectric Properties of PTFE-Based Composites Filled by Micron/Submicron-Blended CCTO

Effects of magnetic field treatment on dielectric properties of CCTO@Ni/PVDF composite with low concentration of ceramic fillers

Network Structure Modification‐Enabled Hybrid Polymer Dielectric Film with Zirconia for the Stretchable Transistor Applications

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