2020
DOI: 10.1002/adfm.201906647
|View full text |Cite
|
Sign up to set email alerts
|

Network Structure Modification‐Enabled Hybrid Polymer Dielectric Film with Zirconia for the Stretchable Transistor Applications

Abstract: Stretchable electronic devices should be enabled by the smart design of materials and architectures because their commercialization is limited by the tradeoff between stretchability and electrical performance limits. In this study, thin‐film transistors are fabricated using strategies that combine the unit process of a novel hybrid gate insulator and low‐temperature indium gallium tin oxide (IGTO) channel layer and a stress‐relief substrate structure. Novel hybrid dielectric films are synthesized and their mol… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
15
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
10

Relationship

2
8

Authors

Journals

citations
Cited by 28 publications
(15 citation statements)
references
References 61 publications
0
15
0
Order By: Relevance
“…Until now, the shapes of rigid islands have been determined according to the specific applications (table S1). In the case of stretchable display or sensor array, since the device arrangement is a square packing, the square-shaped islands (9,10,14,(20)(21)(22)(23)(24)(25) have been mainly used. On the other hand, in the stretchable battery, hexagon- (23,26,27) or circle-shaped islands (CIs) (11,(28)(29)(30) have been used to increase the density of the unit cell.…”
Section: Fabrication and Characterization Of Fwi Embedded In Ecoflex ...mentioning
confidence: 99%
“…Until now, the shapes of rigid islands have been determined according to the specific applications (table S1). In the case of stretchable display or sensor array, since the device arrangement is a square packing, the square-shaped islands (9,10,14,(20)(21)(22)(23)(24)(25) have been mainly used. On the other hand, in the stretchable battery, hexagon- (23,26,27) or circle-shaped islands (CIs) (11,(28)(29)(30) have been used to increase the density of the unit cell.…”
Section: Fabrication and Characterization Of Fwi Embedded In Ecoflex ...mentioning
confidence: 99%
“…Since the discovery of amorphous In-Ga-Zn-O ( a -IGZO) semiconductors in 2004, amorphous oxide semiconductors (AOSs) have been intensively researched because of their high mobility, low gate swing, good uniformity, and extremely low leakage current at relatively low processing temperatures (≤400 °C). To extend the application of AOS thin-film transistors (TFTs) to bendable, foldable, wearable, and stretchable electronics, low-temperature fabrication (<200 °C) of TFTs with high performance on cheap and soft plastic substrates such as PEN, PET, and PDMS is a prerequisite. Dimensional instability, which arises from a large mismatch in thermal expansion coefficients between a soft substrate and inorganic thin film, limits facile fabrication using standard semiconductor processing techniques such as photolithography, thin-film deposition, and annealing. Simultaneously, ultra-low power consumption for these portable electronics is highly desirable due to their limited battery capacity.…”
Section: Introductionmentioning
confidence: 99%
“…Ceramic materials that have a high dielectric constant are widely used as high- k ceramic fillers. These ceramic materials include barium titanate (BT; BaTiO 3 ), titanium dioxide (TiO 2 ), hafnium dioxide (HfO 2 ), zirconium dioxide (ZrO 2 ), copper calcium titanate (CCTO), and BaSrTiO 3 nanofibers . Among these ceramic materials, ZrO 2 is the most extensively studied dielectric and is widely considered to be an excellent candidate because of its relatively high dielectric constant, low leakage current, good thermal stability, large band gap (5–7 eV), and high k (25) .…”
Section: Introductionmentioning
confidence: 99%