High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

Lesecq, Marie; Hoel, Virginie; Etangs-Levallois, A. Lecavelier Des; Pichonat, E.; Douvry, Y.; Jaeger, J.C. de

doi:10.1109/led.2010.2091251

Cited by 52 publications

(36 citation statements)

References 10 publications

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“…Silicon etching is conducted by successively using chemical-mechanical lapping and wet etching in HNA solution (HF (50%)/HNO 3 (65%) : 10/90) to quickly etch the main part of the 780-µm-thick silicon handler substrate down to about 20 µm. This method is similar to the one previously reported in [19]. A selective dry etching by xenon difluoride (XeF 2 ) that features a Si:SiO 2 selectivity greater than 1000:1 [20] is subsequently used to gently remove the remaining silicon, using the buried oxide (BOX) of the SOI wafer as a stop layer.…”

Section: Device Fabrication and Descriptionmentioning

confidence: 95%

150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

Etangs-Levallois

Dubois

Lesecq

et al. 2011

IEEE Electron Device Lett.

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This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 µm and transferred onto a 125-µm-thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5-µm-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that dc and RF performances are invariant even for ultimate thinning down to the buried oxide layer. Furthermore, n-MOSFET performance is improved by 1.5× compared with previous work, and the first demonstration of 100-GHz p-MOSFETs on an organic substrate is presented. Unity-current-gain cutoff and maximum oscillation frequencies as high as 150/160 GHz for n-MOSFETs and 100/130 GHz for p-MOSFETs on a plastic substrate have been measured, respectively.

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Section: Device Fabrication and Descriptionmentioning

confidence: 95%

150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

Etangs-Levallois

Dubois

Lesecq

et al. 2011

IEEE Electron Device Lett.

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“…[1][2][3] Over the last decade, gallium nitride (GaN) devices have been fundamental and essential elements to meet these requirements for high-power amplification of the radio frequency (RF) signal in MHz to GHz frequencies and beyond, especially for military applications. [16][17][18][19][20][21] Growth of GaN on Si simplifies the substrate etching removal process and has hence been the most widely used approach for development of transferred GaN electronics. [16][17][18][19][20][21] Growth of GaN on Si simplifies the substrate etching removal process and has hence been the most widely used approach for development of transferred GaN electronics.…”

Section: Flexible Gallium Nitridementioning

confidence: 99%

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

et al. 2017

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Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm V s and sheet carrier density above 1.07 × 10 cm . The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications.

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“…9 Additionally, flexible HEMTs on a polymeric substrate suffer from significantly reduced current due to the self-heating effect, which limits their high-power applications in flexible electronics. 10,11 To overcome the challenges associated with experimentally proving the concept of multifunctional flexible III-N devices, a flexible substrate that possesses a high elastic modulus and high thermal conductivity is required. Flexible copper (Cu) substrates can satisfy this requirement as they offer both high elastic modulus ($130 GPa) and high thermal conductivity ($400 W/m K).…”

mentioning

confidence: 99%

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Wang

Chen

Lundh

et al. 2020

Applied Physics Letters

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We investigate the effect of strain on the two-dimensional electron gas (2DEG) channel in a flexible Al 0.25 Ga 0.75 N/GaN high-electron-mobility transistor (HEMT) by mechanical bending to prove the concept of active polarization engineering to create multifunctional electronic and photonic devices made of flexible group III-nitride thin films. The flexible HEMTs are fabricated by a layer-transfer process and integrated with a 150-lm-thick Cu film. The strain values are estimated from high-resolution x-ray diffraction and Raman spectroscopy in 4-cm bend-down and À4-cm bend-up test conditions. The strain-induced piezoelectric polarization can alter the charge density of the 2DEG in the channel at the AlGaN/GaN interface and thus modify the output characteristics of the flexible HEMTs. Accordingly, output characteristics show an increase in output current by 3.4% in the bend-down condition and a decrease by 4.3% in the bend-up condition. Transfer characteristics show a shift of threshold voltage, which also supports the 2DEG channel modulation during bending. Computational simulation based on the same structure confirms the same current modulation effect and threshold voltage shift. Furthermore, the electrical characteristics of the flexible HEMTs show a repeatable dependence on the strain effect, which offers potential for electro-mechanical device applications.

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High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

Cited by 52 publications

References 10 publications

150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

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