High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Wu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky; Ho, Yu-Hsuan; Chen, Jianyou; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Y. C.; Chang, Pyung Hun; Luc, Quang Ho; Lin, Yueh Chin; Chang, Edward Yi

doi:10.1109/led.2018.2825645

Cited by 39 publications

(15 citation statements)

References 20 publications

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“…by increasing the threshold voltage or the ON/OFF ratio) of such transistors. [1][2][3] However the integration of such ferroelectric materials (usually perovskites [2,[4][5][6][7] ) on GaN is challenging due to the large lattice mismatch between the two structures and a buffer layer, such as MgO, [2,7] Al2O3, [6] or TiO2, [8] is commonly used to allow for the mismatch. Direct integration of a fully epitaxial ferroelectric material on GaN is the promise of further improvement for such devices.…”

Section: Introductionmentioning

confidence: 99%

“…[20][21][22] ALD however always results in polycrystalline films, with an overall polarization smaller compared to the polarization of single grains, in addition to the need of a wake-up process. Other techniques such as sputtering, [23] MOCVD [24] (including on GaN [1] ) or CSD [25] have been explored, similarly resulting in polycrystalline films. On the contrary, Pulsed Laser Deposition (PLD) is a vapor phase technique that allows the direct epitaxial growth of thin films.…”

Section: Introductionmentioning

confidence: 99%

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Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films

Bégon‐Lours

Mulder

Nukala

et al. 2020

Phys. Rev. Materials

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Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultrathin film of Hf0.5Zr0.5O2 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with X-Rays diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films

Bégon‐Lours

Mulder

Nukala

et al. 2020

Phys. Rev. Materials

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“…In the GaN HEMT power device structure, the 2DEG (with respect to the piezoelectric and spontaneous polarization of the GaN) [11] forms without any gate voltage, which confirms that the GaN devices are naturally depletion-mode (D-mode) or normally-on. Further, the fabrication of enhancement-mode or normally-off (E-mode) GaN HEMT power devices is implemented by several methods: the combination of a metal-insulator-semiconductor (MIS) stack with the use of gate recess [12]; the integration of a series connection between the normally-on GaN HEMT and low-voltage Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) cascode package [13,14]; the fluorine implantation [15]; the oxide charge engineering [16]; and the use of a p-AlGaN [17] or p-GaN as p-type gate material [18], where the conduction band shifts towards up, and results a depletion for the channel of negative gate voltages. Among D-mode and E-mode GaN HEMTs, the E-mode device is preferred for most PEAs as it requires to evince a normally-off condition with large power range [19].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

2021

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In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (VGS) bias stress. Device transfer and transconductance, output, and gate-leakage characteristics were studied in detail, before and after each pulsed and prolonged negative VGS bias stress. We found that the gradual degradation of electrical parameters, such as threshold voltage (VTH) shift, on-state resistance (RDS-ON) increase, transconductance max (Gm, max) decrease, and gate leakage current (IGS-Leakage) increase, is caused by negative VGS bias stress time evolution and magnitude of stress voltage. The significance of electron trapping effects was revealed from the VTH shift or instability and other parameter degradation under different stress voltages. The degradation mechanism behind the DC characteristics could be assigned to the formation of hole deficiency at p-GaN region and trapping process at the p-GaN/AlGaN hetero-interface, which induces a change in the electric potential distribution at the gate region. The design and application of E-mode GaN with p-GaN gate power devices still need such a reliability investigation for significant credibility.

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“…Generally, the trapping effect in an MIS gate stack could be related to the traps at/near the interface, named interface states/border traps, or in the bulk of the insulator [ 9 ]. There have been several techniques used to suppress threshold voltage shift to date, including pre-fluorination argon treatment [ 10 ], sputter-deposited Al

[ 11 ], in-situ pre-deposition plasma nitridation [ 12 ], metal-organic chemical vapor deposition-grown in situ SiN [ 13 , 14 ], hybrid ferroelectric charge trap gate stack [ 15 ], etc., to reduce the trapping effect at/near the insulator/semiconductor interface. Due to the low deposition temperature, there also exists large density of traps in the bulk of the gate insulators deposited by PECVD or ALD.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology

et al. 2021

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In this paper, a novel method to achieve all-GaN integrated MIS-HEMTs in a Si-CMOS platform by self-terminated and self-alignment process is reported. Furthermore, a process of repairing interface defects by supercritical technology is proposed to suppress the threshold voltage shift of all GaN integrated MIS-HEMTs. The threshold voltage characteristics of all-GaN integrated MIS-HEMTs are simulated and analyzed. We found that supercritical NH3 fluid has the characteristics of both liquid NH3 and gaseous NH3 simultaneously, i.e., high penetration and high solubility, which penetrate the packaging of MIS-HEMTs. In addition, NH2− produced via the auto coupling ionization of NH3 has strong nucleophilic ability, and is able to fill nitrogen vacancies near the GaN surface created by high temperature process. The fabricated device delivers a threshold voltage of 2.67 V. After supercritical fluid treatment, the threshold voltage shift is reduced from 0.67 V to 0.13 V. Our demonstration of the supercritical technology to repair defects of wide-bandgap family of semiconductors may bring about great changes in the field of device fabrication.

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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

Cited by 39 publications

References 20 publications

Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films

Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films

Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology

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