High performance nonvolatile memory using SiO₂/SiO_x/SiO_xN_y stack on excimer laser-annealed polysilicon and the effect of blocking thickness on operation voltage

Abstract

Silicon-rich SiO x material is a good charge storage candidate for memory applications that promise a large memory window and low operation voltage. Nonvolatile memory (NVM) devices fabricated on excimer laser-annealed polysilicon using SiO2/SiO x /SiO x N y (OOxOn) structure are investigated with SiO2 blocking thicknesses changing from 15 to 20 to 30 nm. The Si-rich SiO x material exposed numerous non-bridging oxygen hole-centre defect sources and a rich silicon phase in the base material. These defects, as well as amorphous silicon clusters existing in the SiO x layer, enhance the charge storage capacity of the device. Retention properties were ensured by 3.2 nm SiO x N y tunnelling layer growth via N2O plasma-assisted oxynitridation. NVM characteristics showed a retention exceeding 85% of the threshold voltage shift after 104 s and greater than 70% after 10 years. Depending on the blocking thickness of 15, 20 or 30 nm, operating voltages varied from ±9 to ±13 V at a programming/erasing duration of only 1 ms. These excellent operating properties of the OOxOn structure make it a potential competitor among the new generation of memory structures on glass.

Fabrication of SiO2/SiOx/SiOxNy Non-Volatile Memory with Transparent Amorphous Indium Gallium Zinc Oxide Channels

“…14 Several types of NVM using a-Si as active layer were fabricated but the a-Si thin films has low mobility. [16][17][18][19] However, the poly-Si thin films and their electronic applications, such as TFTs and NVM devices, have high cost, need high deposition temperature, and require additional complex processing along with a significantly nonuniform surface over a large area. [16][17][18][19] However, the poly-Si thin films and their electronic applications, such as TFTs and NVM devices, have high cost, need high deposition temperature, and require additional complex processing along with a significantly nonuniform surface over a large area.…”

“…[16][17][18][19] However, the poly-Si thin films and their electronic applications, such as TFTs and NVM devices, have high cost, need high deposition temperature, and require additional complex processing along with a significantly nonuniform surface over a large area. 19 N. V. Duy et al 19 have demonstrated the low operating voltages and good retention properties of Si-rich SiO x as a charge storage layer with a lot of defect source and deep trap levels in the storage layer. 20 Although the organic pentacene was fabricated in low-temperature but it has low mobility.…”

Improving Retention Properties of ALD-AlxOy Charge Trapping Layer for Non-Volatile Memory Application

“…All devices show the acceptable retention properties compared to the reported results with OON or ONO stacks. [27][28][29][30] Also, post-deposition annealing shows the 5% improvement in the charge retention properties than the without annealed Al 2 O 3 -MOOOS gate stack device. band voltage shift of 2.79 V at +14 V programming voltage.…”

The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide

“…The charge trapping sites are observed in the all the conditions. In particular, SiO x having a high Si content shows a remarkably large number of Si-H bonds as well as HSi 3 O, HSi 2 O 2 , H 2 SiO 2 , and HSiO 3 at around 2000~2300 cm −1 [16,17], and as the GR increases, the absorptions around 2000–2300 cm −1 also increase. This implies that many Si phases and defects can exist in the Si-rich SiO X .…”