High performance n-type and ambipolar small organic semiconductors for organic thin film transistors

Abstract

Remarkable progress has recently been achieved in n-type and ambipolar OFETs. In this mini review, we will highlight the representative development of high performance n-type and ambipolar organic semiconductors (OSCs) especially for those n-type small OSCs with thin film mobilities >1 cm(2) V(-1) s(-1), and ambipolar small OSCs with both hole and electron mobilities of over 0.1 cm(2) V(-1) s(-1). This overview shall provide a meaningful guideline for further development of high performance n-type and ambipolar materials and devices.

Electron-Deficient Dihydroindaceno-Dithiophene Regioisomers for n-Type Organic Field-Effect Transistors

“…[47][48][51][52][53] The molecular design of the present OSCs consists in rigidifying the 1,3-or 1,4-phenylene-dithiophene fragment by two bridges in a syn or anti configuration (Scheme 1). This bridge stiffening should play a role on the planarity and molecular arrangements of the π−systems leading to different intermolecular π-π stacking in the solid state.…”

Mixed-stack architecture and solvatomorphism of trimeric perfluoro-ortho-phenylene mercury complexes with dithieno[3,2-b:2′,3′-d]thiophene

“…Their semiconducting properties are also a subject of theoretical studies [2,7]. The prediction [2] and demonstration [8] of balanced, efficient ambipolar charge transport in these systems make them an intriguing class of materials in addition to ambipolar molecular [9,10] and polymeric [11,12] organic semiconductors.…”

Trends in molecular design strategies for ambient stable n-channel organic field effect transistors

“…20 Since the first demonstration of an OFET in 1986, 21 the transport properties of a plethora of OSCs were measured in OFET devices and their applicability in electronic devices was demonstrated. 20,[22][23][24][25] The performance of organic semiconductors in OFETs has improved steadily over the last decade. Charge carrier mobility (m), defined as the drift velocity under unit potential gradient, is the most important parameter to fabricate high performance OFET devices.…”