High‐performance MgO thin films for PDPs with a high‐rate sputtering‐deposition process

Abstract

Abstract— A high‐rate sputtering‐deposition process for MgO thin films for PDP fabrication was recently developed. The deposition rate of the MgO thin film was about 300 nm/min which shows the possibility of production‐line application. The MgO film deposited in this work has a higher density than that of other deposition processes such as electron‐beam deposition and shows good discharge characteristics including firing voltage and discharge formation. These were achieved by controlling the stoichiometry and/or the impurity doping during the sputtering process.

Discharge properties and chemical stability of SrZrO films

“…In this study, we adapted a hot-cathode sputtering method. 11 Figure 1 is a schematic diagram of the hot-cathode sputtering method. In this method, we inserted a quartz plate between the cathode electrode and the target to increase the target temperature and used powder materials as the sputtering target.…”

“…2, the temperature of the powder target is increased by the heat-insulation effect and the target material is deposited by sublimation with red heat in addition to the collision with Ar ions. 11 Therefore, in this method, Sr is preferentially deposited due to its high saturation vapor pressure compared with that of Zr. In this study, the background pressure was 4 × 10 -3 Pa, RF power was 600 W, and working pressure during deposition was 0.3 Pa. SrO and SrZrO 3 powder were used as targets.…”

Plasma-Assisted Deposition of Magnesium-Containing Coatings on Porous Scaffolds for Bone Tissue Engineering

“…Results in agreement with those just mentioned can also be observed for 3D porous scaffolds (Table 2); a lower magnesium content in comparison with the corresponding flat samples can be noted, which is closely related to the analytical problems that the morphology and structure of these porous samples can cause. The different outcomes obtained by varying the feed composition are attributable to the impact of the latter on the RF sputter process from the MgO target, which is known to affect the sputtering yield [37][38][39][40][41]. It is possible to conclude that under the experimental conditions used in this work, H 2 O feed shows a lower capacity than Ar and Ar/H 2 O to sputter Mg from the target, while the H 2 feed exhibits a higher ability to sputter the same material compared with Ar and Ar/H 2 mixtures.…”

“…As a result, a decrease in the sputter rate can occur because the binding energy of the compounds is much higher than that of pure metals. On the contrary, when H 2 is used as a reactive gas, it can promote the etching of the oxygen present on the target and the formation of metallic Mg, which can be easily sputtered due to its higher sputter rate compared to MgO [37][38][39][40][41]. In fact, after the sputtering process performed with H 2 , the color of the target's surface turns grayish, which is indicative of the formation of metallic Mg.…”

“…In Figure 7, the viability data obtained for Saos-2 cells grown on the three types of scaffolds with different culture times (17,40, and 88 h) are reported. This can be attributed to the fact that the MTT values are too low to be able to perceive a difference in cell viability on different scaffolds.…”