High-Performance Metal–Insulator–Metal Capacitors Using Europium Oxide as Dielectric

Padmanabhan, Revathy; Bhat, Navakanta; Mohan, S.

doi:10.1109/ted.2012.2188329

Cited by 17 publications

(9 citation statements)

References 40 publications

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“…

J = normalC E \exp [- (q ϕ_{P F} - β_{P F} E^{1 / 2}) / k T]

J = normalA T^{2} \exp [- (q ϕ_{s} - β_{s} E^{1 / 2}) / k T]

where C and A are constants, E is the electric field, T = 298 K, q is the electron charge, ϕ PF is the trap height in the dielectric for PF emission [15], and ϕ S is the barrier height of the interface between the dielectric and the injecting electrode for Schottky emission, k is the Boltzmann constant, β PF and β S are ( q 3 / πε 0 ε r,OP ) 1/2 and ( q 3 /4 πε 0 ε r,OP ) 1/2 , respectively, in which ε 0 is the permittivity in vacuum, and ε r,OP denotes the dynamic permittivity measured in the optical domain (square of the refractive index, n 2 ).…”

Section: Resultsmentioning

confidence: 99%

“…Concerning this, many researchers have made much effort to fabricate three-dimensional (3D) structures by anodic aluminum oxide macro-holes [10] or silicon micro-holes [13], in which large areal MIM layers are grown. So far, more attention has been paid to high- k dielectrics, including HfO 2 [1,8], Al 2 O 3 [2,14], TaYO x [3], ZrO 2 [4], Lu 2 O 3 [6], and Eu 2 O 3 [15] and their combinations, such as sandwiched [9,16], stacked [5,7], and laminate structures [17,18], based on the substrate areas of within the millimeter scale in the past few years. Currently, most of the 3D MIM capacitors are being used for dynamic random access memory.…”

Section: Introductionmentioning

confidence: 99%

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High-Performance MIM Capacitors for a Secondary Power Supply Application

Chou

et al. 2018

Micromachines

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Microstructure is important to the development of energy devices with high performance. In this work, a three-dimensional Si-based metal-insulator-metal (MIM) capacitor has been reported, which is fabricated by microelectromechanical systems (MEMS) technology. Area enlargement is achieved by forming deep trenches in a silicon substrate using the deep reactive ion etching method. The results indicate that an area of 2.45 × 103 mm2 can be realized in the deep trench structure with a high aspect ratio of 30:1. Subsequently, a dielectric Al2O3 layer and electrode W/TiN layers are deposited by atomic layer deposition. The obtained capacitor has superior performance, such as a high breakdown voltage (34.1 V), a moderate energy density (≥1.23 mJ/cm2) per unit planar area, a high breakdown electric field (6.1 ± 0.1 MV/cm), a low leakage current (10−7 A/cm2 at 22.5 V), and a low quadratic voltage coefficient of capacitance (VCC) (≤63.1 ppm/V2). In addition, the device’s performance has been theoretically examined. The results show that the high energy supply and small leakage current can be attributed to the Poole–Frenkel emission in the high-field region and the trap-assisted tunneling in the low-field region. The reported capacitor has potential application as a secondary power supply.

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“…

J = normalC E \exp [- (q ϕ_{P F} - β_{P F} E^{1 / 2}) / k T]

J = normalA T^{2} \exp [- (q ϕ_{s} - β_{s} E^{1 / 2}) / k T]

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Performance MIM Capacitors for a Secondary Power Supply Application

Chou

et al. 2018

Micromachines

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“…were developed and a steep SS was successfully realized, reaching up to 60 mV/dec (Fig. 6)666768697071. However, a larger dielectric constant is needed to reach 60 mV/dec.…”

Section: Resultsmentioning

confidence: 99%

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

Park

Jang

Kim

et al. 2016

Sci Rep

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Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

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“…6(b). The quadratic fitting of the experimental data used to find the value of VCC follows the following equation [2], [7] ΔC(V ) = C 0 (αV 2 + βV )…”

Section: Resultsmentioning

confidence: 99%

Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

Srivastava

Mangla

Gupta

2015

IEEE Trans. Nanotechnology

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Metal-insulator-metal (MIM) capacitors withAl/HfO 2 /La 2 O 3 /Al structure were fabricated using pulse laser deposition for the first time and were further investigated for their electrical and morphological properties. The MIM capacitors for future applications in analog/mixed signal circuits need further improvement in their electrical characteristics. We have fabricated MIM capacitors having low leakage current density of ∼ 9.6 × 10 −9 A/cm 2 at −1 V and high-capacitance density ∼20.8 fF/μm 2 at 3.5 V for 100-Hz frequency. The frequency dispersion effect of these MIM capacitors is observed to be quite small. We have also obtained an improved voltage coefficient of capacitance of ∼101 ppm/V 2 at 1 MHz along with improved dielectric constant which is one of the most important parameters for next generation MIM capacitors. The physical thickness of HfO 2 /La 2 O 3 dielectric film stack is found to be 13 nm in cross-section TEM. This value of physical thickness is consistent with the low EOT ∼1.66-nm estimated using C-V curve. Morphological studies of having nanostructured film morphology with low roughness are consistent with the electrical characteristics of MIM capacitors. Further improvement in electrical properties like lower leakage current density, etc., has been obtained in post metallic annealed MIM capacitors. We have observed Schottky emission as the dominant current conduction mechanism for these MIM capacitors. Index Terms-Dielectric constant, HfO 2 , high-κ dielectric, La 2 O 3 , MIM capacitor, voltage coefficient of capacitance.1536-125X India. His current research interests include fabrication of nanomaterials using plasma methods and their characterization for optical and electrical applications. He is also working on the fabrication of high-k dielectrics using plasma methods and study their various properties for possible use in next generation metal-oxide-semiconductor and metal-insulator-metal capacitors.V. Gupta (SM'01) received the B.Sc., M.Sc., and Ph.D. degrees in physics in 1987, 1989, and 1995, from the University of Delhi, Delhi, India.In 1995, he was a Reader in Physics at Deendayal Upadhyaya College, University of Delhi. He is currently a Professor in the Department of Physics and Astrophysics, University of Delhi. He received BOYSCAST fellow and MRSI medal. His current research interests include piezoelectric, ferroelectric, multiferroics and semiconducting thin films, gas/ bio sensors, UV photon detector, electro-optic applications, surface plasmon resonance, oxide nanostructures for multifunctional applications, etc. He is also working on the fabrication of MEMs-based microheaters, microwave resonators, surface acoustic wave devices, etc., and their respective applications.

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High-Performance Metal–Insulator–Metal Capacitors Using Europium Oxide as Dielectric

Cited by 17 publications

References 40 publications

High-Performance MIM Capacitors for a Secondary Power Supply Application

High-Performance MIM Capacitors for a Secondary Power Supply Application

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

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High-Performance Metal–Insulator–Metal Capacitors Using Europium Oxide as Dielectric

Cited by 17 publications

References 40 publications

High-Performance MIM Capacitors for a Secondary Power Supply Application

High-Performance MIM Capacitors for a Secondary Power Supply Application

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

Study of La-Incorporated HfO2 MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications

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Study of La-Incorporated HfO₂ MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications