High-performance memristor based on MoS2 for reliable biological synapse emulation

A bi-functional three-terminal memristor applicable as an artificial synapse and neuron

“…42,43 The decay process can be divided into two coupling phases: a rapid phase with a short relaxation time constant ( τ 1 = 33 ms) and a subsequent slow phase with a large time constant ( τ 2 = 774 ms), 44–46 which are commensurate in scale with that observed in biological synapses. 47…”

“…42,43 The decay process can be divided into two coupling phases: a rapid phase with a short relaxation time constant (τ 1 = 33 ms) and a subsequent slow phase with a large time constant (τ 2 = 774 ms), [44][45][46] which are commensurate in scale with that observed in biological synapses. 47 We further demonstrate high-pass dynamics filtering using the STP properties of the device by applying multiple gate pulses with varying frequencies. As shown in Fig.…”

High-Performance Neuromorphic Computing and Logic Operation Based on a Self-Assembled Vertically Aligned Nanocomposite SrTiO3:MgO Film Memristor

“…Interestingly, we observed that increasing the fabrication temperature to 750 °C would lead to a highly uniform and dense distribution of VAN STO:MgO films as well as an important improvement in the film flatness. This is likely attributed to the improved crystallinity of STO and MgO at higher fabrication temperatures, leading to lower diffusion rate, smaller columnar grain structures, higher density, and better surface flatness …”

“…This is likely attributed to the improved crystallinity of STO and MgO at higher fabrication temperatures, leading to lower diffusion rate, smaller columnar grain structures, higher density, and better surface flatness. 36 Next, to investigate the RS behavior of STO:MgO-based memristors at different fabrication temperatures, we performed electrical measurements on the devices. The devices were subjected to direct current (DC) voltage applied to the top electrode while the bottom electrode was grounded.…”

“…34 In addition, there are many reported works on selfassembled VAN films, including BaTiO 3 :CeO 2 and SrZrO 3 :RE 2 O 3 (RE = Sm, Dy, Gd, Er, and Eu), which achieved robust resistive performance and tunable ionic conductivity by the strain in films. 35,36 In such VAN structures, restricted ion nanochannels can achieve information transferring processes, which undoubtedly highly resemble the essential biological synaptic information processing function, laying the physical foundation for next-generation intelligent devices. 34 Thus, these results prove that self-assembled VAN films manifest great potential for use in superior-performance neuromorphic devices.…”