Multilevel resistive switching memristor based on silk fibroin/graphene oxide with image reconstruction functionality

Liu, Shubin; Cheng, Yu; Han, Fang; Fan, Suna; Zhang, Yaopeng

doi:10.1016/j.cej.2023.144678

Cited by 11 publications

(9 citation statements)

References 59 publications

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“…When the pulse is in the normal program, the output current increases with the increase of the pulse number, which is the enhancement process. Under the negative program pulse, the output current decreases with the increase of the number of negative pulses, which is a suppression process. , …”

Section: Resultsmentioning

confidence: 99%

“…Under the negative program pulse, the output current decreases with the increase of the number of negative pulses, which is a suppression process. 64,65 In order to further study the long-term synaptic plasticity of the device, we applied continuous program pulses with an amplitude of −4 V and a pulse width of 40 ms to the device and observed the continuous increase of the output current, as shown in Figure 6(e). In order to better analyze the effect of pulse application on the memory ability of the device, the following Kohlrausch stretching index function is used to fit the current relaxation behavior after pulse stimulation:…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Multilevel Logic Operation and Artificial Synaptic Plasticity Based on Pectin Transient Memristor

Liu,

Yuan,

et al. 2024

ACS Appl. Electron. Mater.

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The biotransient degradable memristor of Al/pectin-graphene oxide (GO)/ITO was prepared by using pectin-doped GO as the medium layer. The doped device has good bipolar resistance switching behavior, an excellent on/off current ratio (10 4 ), and negligible electrical degradation, which can be observed in 100 repeat cycles. Due to the ionization of the carboxyl group of the pectin film, it can be dissolved in deionized water in 30 min and in acetic acid solution in 20 min, which is in line with the development trend of transient electronics. The device has remarkable information storage and synaptic characteristics, which can realize various resistance states of the memristor and can realize the logic operation of an "OR gate" and "AND gate". It has short-term potentiation, short-term depression and longterm potentiation, and has long-term durable synaptic performance and logic coding ability. Therefore, the device has potential application value in the fields of classified information storage, wearable and implantable electronic devices, and multilevel storage and is expected to make new progress in the latest research system of brain-like implantable artificial synapses based on biomemristors.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Multilevel Logic Operation and Artificial Synaptic Plasticity Based on Pectin Transient Memristor

Liu,

Yuan,

et al. 2024

ACS Appl. Electron. Mater.

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“…Given that silk fibroin protein contains carboxyl groups (COOH) and undergoes hydrolysis, resulting in oxygen vacancies, coupled with the fact that doped graphene oxide (GO) inherently contains oxygen vacancies as confirmed by existing literature, it can be reasonably inferred that the conductive mechanism of the SF memristor and SF:GO memristor is intricately linked to the presence of oxygen vacancies. 24 The conductive mechanism of Al/SF/ITO is illustrated in Figure 5a when a forward voltage is applied to the Al electrode. The forward voltage drop reduces the barrier height between SF and Al, thereby injecting more holes into SF to enhance its conductivity.…”

Section: Resultsmentioning

confidence: 99%

“…27 Although the electrical synaptic plasticity of SF and graphene oxide have been described in previous reports, no experiments on optical synaptic plasticity have been performed for technological reasons. 24 In this work, we prepared two memristors using silk fibroin and a composite of silk fibroin with graphene oxide (GO). They successfully achieved short-term plasticity (STP) and long-term plasticity (LTP), which are critical characteristics of neural synapses.…”

Section: Introductionmentioning

confidence: 99%

Memristor Based on Silk Fibroin and Graphene Oxide Blend for Electrical and Optical Synaptic Behavior

Li,

Sun,

Liu

2024

ACS Appl. Nano Mater.

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“…The electrodes play a vital role in memory behavior. With a GO/silk fibroin/GO structure, Liu et al reported multilevel storage with binary and ternary switching behaviors in a single device [113]. For I cc ≤ 0.01 A, the device exhibits binary switching because of the SCLC mechanism, while I cc exceeds 0.01 A, the device changes to ternary switching behavior, due to the SCLC and Poole-Frenkel emission mechanisms.…”

Section: Biomacromolecules-based Rs Memory Devicesmentioning

confidence: 99%

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory

Li,

Zhang,

et al. 2023

Polymers

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Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.

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Multilevel resistive switching memristor based on silk fibroin/graphene oxide with image reconstruction functionality

Cited by 11 publications

References 59 publications

Multilevel Logic Operation and Artificial Synaptic Plasticity Based on Pectin Transient Memristor

Multilevel Logic Operation and Artificial Synaptic Plasticity Based on Pectin Transient Memristor

Memristor Based on Silk Fibroin and Graphene Oxide Blend for Electrical and Optical Synaptic Behavior

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory

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