High performance low-temperature poly-Si n-channel TFTs for LCD

Mimura, Akio; Konishi, N.; Ono, Kyosuke; Ohwada, J.; Hosokawa, Y.; Ono, Yūichi; Suzuki, Takaya; Miyata, Kenji; Kawakami, Hideaki

doi:10.1109/16.19936

Cited by 177 publications

(36 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2, the performance of the MILC-TFT's is indeed far superior to that of the SPC-TFT's fabricated under the same conditions which are not the optimum conditions for SPC-TFT's. A comparison of the relevant device parameters of the two kinds of devices is summarized in Table I It is well known that SPC poly-Si has a columnar grain structure with grain boundaries randomly oriented with respect to the direction of [7]. These grain boundaries trap charge carriers and build up potential barriers to the flow of carriers.…”

Section: Device Characterizationmentioning

confidence: 99%

Effects of longitudinal grain boundaries on the performance of MILC-TFTs

Bhat

Jin

Kwok

et al. 1999

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Compared to conventional solid phase crystallized (SPC) thin-film transistors (TFT's), metal induced laterally crystallized (MILC) TFT's exhibit significantly enhanced performance at reduced processing temperature. It is concluded that the major improvements in MILC-TFT's result from the growth of the crystal grains in a direction longitudinal to that of the current flow, whereas in SPC-TFT's, the grain boundaries are randomly oriented. It is also observed in this work that while the MILC-TFT's are less sensitive to short-channel effects (SCE's), their leakage current exhibits higher sensitivity to channel length reduction. These differences again can be traced to the different arrangements of the grain boundaries in the two types of devices.

show abstract

Section: Device Characterizationmentioning

confidence: 99%

Effects of longitudinal grain boundaries on the performance of MILC-TFTs

Bhat

Jin

Kwok

et al. 1999

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…Since the sizes of the observed grains were larger than the film thickness, the crystalline area fraction could be assumed to be the crystalline volume fraction. 14 , [1] Where 0 is a lag time for nucleation and c is a characteristic time. diagram, the crystallization began after a certain annealing time, and a longer annealing time was required for the film to be completely crystallized as annealing temperature decreased.…”

Section: Methodsmentioning

confidence: 99%

Solid Phase Crystallization (SPC) of a-Si Thin Film Induced by a Novel Approach for Photovoltaic Devices

et al. 2008

View full text Add to dashboard Cite

The solid phase crystallization (SPC) of amorphous silicon thin films by a novel modification of nucleation step was investigated at low temperature.The thin film consists of polycrystalline nanoparticles embedded in an amorphous matrix which can act as nuclei, resulting in a lower thermal energy for the nucleation. Thus, this energy can shorten the transition time from amorphous to polycrystalline silicon and lower the processing temperature. The crystallinity and the crystallized volume fraction of silicon thin film annealed by the conventional furnace have been extensively studied by XRD and HRTEM. It was believed that high quality Si nanoparticles would act as nuclei for growth of crystalline Si, thus removing the high temperature requirement for nucleation. The crystalline films induced by nanoparticles can be used for the photovoltaic devices on glass substrates at a maximum temperature of 530°C.

show abstract

“…For comparison bulk crystalline silicon is typically 10 2 -10 3 cm 2 /Vs. 5 The present samples have considerable nanocrystalline grains, as evidenced by tailing in the Raman spectrum to low frequencies ( Figure 10). 3 More careful thermal annealing should allow for considerable reduction in the amount of this nanocrystalline silicon and improved mobility.…”

Section: Electronics In a Fibermentioning

confidence: 95%

Integrated optoelectronics in an optical fiber

et al. 2007

View full text Add to dashboard Cite

Integration of semiconductor and metal structures into optical fibers to enable fusion of semiconductor optoelectronic function with glass optical fibers is discussed. A chemical vapor deposition (CVD)-like process, adapted for high pressure flow within microstructured optical fibers allows for flexible fabrication of such structures. Integration of semiconductor optoelectronic devices such as lasers, detectors, and modulators into fibers may now become possible.

show abstract

High performance low-temperature poly-Si n-channel TFTs for LCD

Cited by 177 publications

References 28 publications

Effects of longitudinal grain boundaries on the performance of MILC-TFTs

Effects of longitudinal grain boundaries on the performance of MILC-TFTs

Solid Phase Crystallization (SPC) of a-Si Thin Film Induced by a Novel Approach for Photovoltaic Devices

Integrated optoelectronics in an optical fiber

Contact Info

Product

Resources

About