High-performance low-leakage enhancement-mode high-K dielectric GaN MOSHEMTs for energy-efficient, compact voltage regulators and RF power amplifiers for low-power mobile SoCs

Then, Han Wui; Chow, Lee; DasGupta, Sandeepan; Gardner, S.; Radosavljević, M.; Rao, Valluri; Sung, Soo Hak; Yang, Guangren; Chau, R.

doi:10.1109/vlsit.2015.7223674

Cited by 26 publications

(9 citation statements)

References 5 publications

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“…As is known, traditional GaAs technology has been employed in the terminal applications mentioned above. However, as a significant breakthrough, low voltage GaN technology is able to deliver higher PAE than GaAs technology at the same output power level to enable lower power consumption [5], exhibiting the application space of GaN technology could be expanded beyond the existing high voltage RF electronics to include low voltage ones [6], [7]. What's more, GaN technology has the superiority in bandwidth than GaAs technology, which makes it possible to realize high speed broadband communication as well as significant reduction in the number of power amplifier (PA), the chip area and the cost for mobile terminals.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Zhou

Zhu

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analysed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is performed on mature AlGaN/GaN heterojunction as well as strongly polarized InAlN/GaN heterojunction, to make a comparison of low voltage RF power capability between two devices. Although it suffers from relatively severe RF dispersion, InAlN/GaN HEMT delivers higher output power density (Pout) than its opponent, benefiting from the lower parasitic resistance and knee voltage as well as higher output current density. At 8 GHz, Pout of 1.62 W/mm and 1.10 W/mm are achieved for InAlN/GaN and AlGaN/GaN HEMT, respectively, both of which are biased at class AB operation and Vds of 9 V. However, the tremendous degradation of power added efficiency (PAE) occurs as the higher drain voltage is applied on InAlN/GaN HEMT, as the result of the severe gate leakage. What is more, a higher PAE is more necessary than Pout for terminal applications. Either InAlN/GaN HEMT or AlGaN/GaN HEMT has its own specific voltage range to deliver higher PAE. Concretely, InAlN/GaN HEMT is more suitable to applications with operating voltage not exceeding 6 V, and AlGaN/GaN HEMT is preferred for ones with relatively higher voltage, accompanied by the decent PAE as high as 62% to 66% and moderate Pout to meet the demand of various low voltage terminal applications.

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Section: Introductionmentioning

confidence: 99%

“…Up to now, only a few researches on low voltage GaN HEMTs have been demonstrated, most of which are concerned with strongly polarized InAlN/GaN heterojunction [5][6][7][8]. And the low voltage RF power performance of AlGaN/GaN HEMT is rarely reported [4].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Zhou

Zhu

et al. 2021

IEEE J. Electron Devices Soc.

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“…Recently, Intel reported the fabrication of an enhancement-mode (e-mode) GaN MOS-HEMT with an AlN/Al 2 O 3 /HfO 2 composite high-K gate dielectric which shows an outstanding f T /f MAX of 200 GHz/300 GHz, as mentioned in Section 1.1 . These results show that the GaN MOS-HEMT is attractive for realizing energy-efficient, compact voltage regulators and RF power amplifiers for mobile systems on a chip (SoCs) [ 24 , 33 ], as shown in Figure 18 .…”

Section: Cmos-compatible Au-free Gan Technologymentioning

confidence: 99%

“… ( a ) Schematic of the e-mode high-K GaN MOS-HEMT. ( b ) I D -V G of the L G = 90 nm e-mode GaN MOS-HEMT showing low I OFF = 70 nA/μm (at V G = 0 V, V D = 3.5 V), and ( c ) I D -V D of the same device showing low on-resistance of R ON = 490 Ω μm [ 24 ]. Figure reproduced with permission from IEEE 2015 Symposium on VLSI Technology.…”

Section: Figurementioning

confidence: 99%

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The Evolution of Manufacturing Technology for GaN Electronic Devices

Liu

Langpoklakpam

et al. 2021

Micromachines

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GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

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