High-Performance Lead-Free Layered-Perovskite Photodetectors and Bipolar Transistors by Solvent Engineering

Wu, Jun; Miao, Yuchen; Qi, Xiaorong; Yang, Liu; Wang, Xu; Zheng, Fei; Zhao, Feiyu; Shafique, Shareen; Hu, Ziyang

doi:10.1021/acsphotonics.3c01294

Cited by 5 publications

(2 citation statements)

References 57 publications

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“…To achieve high D *, the dark current density ( J d ) and consequentially noise current ( i n ) should be reduced. The elements causing J d are still widely discussed; however, some of its underlying mechanisms such as thermal generation, charge injection, trap-assisted tunneling, and recombination have been identified to largely influence its value. − Defects found in the bulk, at the surface, or interfaces of the active layer create defect states within the bandgap, which fuel such mechanisms, thereby increasing J d . Defects in the bulk have been attributed to Frenkel defects, dislocations, lattice strain, and migrating ions. − Instead, dangling bonds from grain boundaries, anionic vacancies (especially iodine vacancies), and interfaces have been blamed for the surface contribution. , Energy level alignment was also shown to dominate the charge injection mechanism: a larger energy difference (Δ E ) between the anode and perovskite conduction band (CB) suppresses injection and tunneling. , …”

Section: Introductionmentioning

confidence: 99%

Blending Self-Assembled Monolayers for Enhanced Band Alignment and Improved Morphology in p-i-n Perovskite Photodetectors

Angela,

Nodari,

Furlan

et al. 2024

ACS Appl. Mater. Interfaces

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Perovskite photodetectors, devices that convert light to electricity, require good extraction and low noise levels to maximize the signal-to-noise ratio. Self-assembling monolayers (SAMs) have been shown to be effective hole transport materials thanks to their atomic layer thickness, transparency, and energetic alignment with the valence band of the perovskite. While efforts are being made to reduce noise levels via the active layer, little has been done to reduce noise via SAM interfacial engineering. Herein, we report hybrid perovskite photodetectors with high detectivity by blending two different SAMs (2-PACz and Me-4PACz). We find that with a 1:1 2-PACz:Me-4PACz ratio (by weight), the devices achieved a low noise of 1 × 10 −13 A Hz −1/2 , a high responsivity of 0.41 A W −1 at 710 nm, and a specific detectivity of 6.4 × 10 11 Jones at 710 nm at −0.5 V, outperforming its two counterparts. In addition to the improved noise levels in these devices, impedance spectroscopy revealed that higher recombination lifetimes of 0.85 μs were achieved for the 1:1 2-PACz:Me-4PACz-based photodetectors, confirming their low defect density.

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Section: Introductionmentioning

confidence: 99%

Blending Self-Assembled Monolayers for Enhanced Band Alignment and Improved Morphology in p-i-n Perovskite Photodetectors

Angela,

Nodari,

Furlan

et al. 2024

ACS Appl. Mater. Interfaces

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“…22 Among them, tin (Sn) and germanium (Ge) elements are located in the same group as lead (Pb) and have a +2 valence state. [23][24][25] After about ten years of research, the device performance of Snbased perovskites has been greatly improved, especially in the case of field-effect transistors composed of Sn-based perovskites. The field-effect mobility for (C 6 H 5 C 2 H 4 NH 3 , PEA) 2 SnI 4 perovskite field-effect transistors have increased from 0.62 to 15 cm 2 V À1 s À1 .…”

Section: Introductionmentioning

confidence: 99%

Recent advances in lead-free halide perovskites: from synthesis to applications

Wang,

Liu,

Liu

et al. 2024

J. Mater. Chem. C

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Achieving Inkjet‐Printed 2D Tin Iodide Perovskites: Excitonic and Electro‐Optical Properties

Chirvony,

Muñoz‐Matutano,

Suárez

et al. 2024

Adv Funct Materials

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Currently, there is a great demand for non‐toxic lead‐free halide perovskites as active materials for solar cells, light‐emitting diodes and other optoelectronic devices. Although an essential progress has been made using tin(II) halide perovskites, still greater efforts are needed to improve their stability and manufacture films and devices under a scalable technology. The first goal of the work is to achieve suitable physical properties of 2D Sn(II) polycrystalline perovskite films obtained by the industrially scalable inkjet printing deposition technique. In the present work, inks of 2D tin(II) halide perovskite 2‐thiopheneethylammonium tin(II) iodide, TEA2SnI4, have been successfully formulated in DMF (toxic) and DMSO (non‐toxic) solutions and using appropriate additives (SnF2 and reducing agents) for improving the stability of the inks and the resulting films. Room‐ and low‐temperature excitonic photoluminescence (PL), charge carrier recombination dynamics and µ‐PL is used to explain the observed two excitonic bands, which are associated to the bulk and edges of perovskite grains nanoplatelet‐like composing the polycrystalline films. Promising electro‐optical properties are also obtained in the TEA2SnI4 films inkjet‐printed from DMSO formulations onto ITO‐interdigitated electrodes, such as low dark currents, ≈10 – 20 nA at 10 V of bias voltage, and high responsivities ≈1–20 A/W.

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High-Performance Lead-Free Layered-Perovskite Photodetectors and Bipolar Transistors by Solvent Engineering

Cited by 5 publications

References 57 publications

Blending Self-Assembled Monolayers for Enhanced Band Alignment and Improved Morphology in p-i-n Perovskite Photodetectors

Blending Self-Assembled Monolayers for Enhanced Band Alignment and Improved Morphology in p-i-n Perovskite Photodetectors

Recent advances in lead-free halide perovskites: from synthesis to applications

Achieving Inkjet‐Printed 2D Tin Iodide Perovskites: Excitonic and Electro‐Optical Properties

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