High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs)

Monolithic interconnected modules (MIM) for high irradiance photovoltaic energy conversion: A comprehensive review

“…Fatemi and Wilt decided to compare experimentally the aforementioned two design alternatives [114]. In this work they developed GFI-MIM devices with a 0.25 µm thick LCL and a doping of 10 18 cm -3 (to be compared to the 1 µm thick and 10 19 cm -3 doped LCL from the conventional design).…”

“…In this work they developed GFI-MIM devices with a 0.25 µm thick LCL and a doping of 10 18 cm -3 (to be compared to the 1 µm thick and 10 19 cm -3 doped LCL from the conventional design). Results from different kinds of MIM devices were presented in [114]: employing 0.6 eV InGaAs (lattice-mismatched to InP) according to the conventional and GFI schemes and 0.74 eV (lattice-matched to InP) devices based on the conventional scheme. The results showed slightly better performance for the conventional devices, either in terms of J, V OC , and FF.…”

0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1−ybuffers

“…1 which allows the use of the desired n-on-p cell configuration with an InGaAs tunnel junction as needed for monolithic interconnected module (MIM) TPV. [13] The active region of the cell consists of a p/n junction (base/emitter) of InGaAs surrounded by the layers of InAsP, which is used to passivate the high recombination-velocity In-GaAs surface and confine the minority carriers, leading to an improved device performance. [14] The Ni/AuGe/Ni/Au metallization was used for the n-type Ohmic contact.…”

Optimization of In0.68Ga0.32As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically Graded InAsP Buffer by Metal–Organic Chemical Vapor Deposition

“…A thermophotovoltaic (TPV) cell is a type of semiconductor optoelectronic device that converts infrared radiant heat energy emitted by high-temperature heat emitters into electrical power. [1][2][3][4][5] Most TPV systems are designed to operate between 1000 and 1500 C; therefore, the band gap energy of a TPV material is generally between 0.4-0.7 eV in order to achieve radiation absorption as much as possible. An InGaAs material grown on an InP substrate with a narrow band gap has been proved to be an ideal material for the preparation of TPV devices.…”