High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3

Liu, H.G; Wu, Janne‐Hua; Tao, N.; Firth, Andrea V.; Griswold, E. M.; MacElwee, T.W.; Bolognesi, C.R.

doi:10.1016/j.jcrysgro.2004.04.035

Cited by 18 publications

(5 citation statements)

References 7 publications

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“…[7][8][9] Metalorganic vapor-phase epitaxy ͑MOVPE͒ is widely used to fabricate III/V compound semiconductors containing antimony and phosphorus. [10][11][12][13][14] During the growth of heterojunctions, e.g., GaAsSb on InP, the group-V source must be switched from phosphorus to antimony and arsenic. The lack of common elements in this material system makes the heterojunction growth challenging, as simultaneous adsorption, desorption, and bulk diffusion of antimony, arsenic, and phosphorus may occur, leading to intermixing at the interface.…”

Section: Introductionmentioning

confidence: 99%

“…[16][17][18][19] Cross-sectional transmission electron micrographs have shown that GaAsSb/ InP superlattices exhibit a diffuse and strained interface for GaAsSb growth on top of InP. 11,12 In this work, we have characterized InP ͑001͒ surfaces that have been exposed to trimethylantimony ͑TMSb͒ in a MOVPE reactor at 450-600°C. The antimony quickly saturates the surface and does not appear to diffuse into the bulk crystal.…”

Section: Introductionmentioning

confidence: 99%

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The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor

Sun

Cheng

Chen

et al. 2005

Journal of Applied Physics

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Indium phosphide ͑001͒ surfaces were exposed to 0.61-mTorr trimethylantimony in a metalorganic vapor-phase epitaxy reactor. The antimony surface composition increased rapidly with dosage and saturated at 22.0 at. % for temperatures between 450 and 600°C. The results indicate that a thin layer of InSb formed on the surface, ϳ6.8 Å thick. Strain from the lattice mismatch caused faceting in the ͓110͔ direction, whereas the formation of Sb dimer bonds relieved the strain in the ͓−110͔ direction. As a result, narrow ridges formed that ranged from 4 to 10 nm wide and from 3.0 to 18.0 Å high, depending on the antimony coverage.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor

Sun

Cheng

Chen

et al. 2005

Journal of Applied Physics

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“…Two types of grading schemes have been developed for GaInAs, namely the step-graded launcher 2) and the chirpedsuperlattice collector. 3) An alternative to these designs relying on the "Type-II" InP/GaAsSb system has been under development since 1997 in our group, [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] providing the best f T × BV CEO products among bipolar transistors with values as high as 2.8 THz-V at room temperature. 22) Our 2018 SSDM conference presentation 23) contrasted the operating physics of the aforementioned three DHBT collector types with the aid of quantum transport (QT) based simulations: a detailed report on this work will be made separately in due course.…”

Section: Introductionmentioning

confidence: 99%

Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs)

Bolognesi

Quan

Arabhavi

et al. 2019

Jpn. J. Appl. Phys.

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Double heterojunction bipolar transistors (DHBTs) are intended to extend the breakdown voltage beyond what is possible in single heterojunction bipolar transistors, ideally without sacrificing frequency performance. InP/GaAsSb DHBTs offer the most favorable cutoff frequency versus breakdown voltage tradeoff among all bipolar transistors. It has been shown that the addition of Indium to a GaAsSb base further increases current gain cutoff frequencies fT. In the present article, we compare ternary (GaAsSb) and quaternary (GaInAsSb) graded base DHBTs fabricated side-by-side to shed light on the physical mechanism responsible for the increase in cutoff frequencies. Ternary and quaternary base DHBTs show markedly distinct RF behaviors when measured at reduced temperatures—we use these differences to infer that the improved cutoff frequencies with GaInAsSb base layers arise because of a reduced electron population of the L-valley with increasing In-content in the base. A quantum transport calculation based on the non-equilibrium Green’s function formalism and the empirical tight-binding method for electron transport through the base and collector regions with different Γ-L separations for different temperatures reproduces the main experimentally observed features.

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“…10,11 Previously, when GaAsSb was used as the base of HBTs on InP substrates, it is noted that the films are almost exclusively grown by MOCVD. [12][13][14] MBE is expected to offer advantages due to being farther away from equilibrium growth than MOCVD. Follow up on previous studies, 9,15 MBE was employed to carry out research on the growth and doping of GaAsSb alloys lattice-matched to InP under optimized MBE growth conditions in this paper.…”

Section: Introductionmentioning

confidence: 99%

Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

Chou

Torfi

Wang

2013

Journal of Applied Physics

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GaAsSb alloys lattice-matched to InP substrate have been used in various electronic and optoelectronic applications due to their highly desirable band alignment for high-speed double heterojunction bipolar transistors. There is however an issue with GaAsSb alloys, composed approximately of 50% As and 50% Sb, lattice-matched to an InP substrate; it exhibits a miscibility gap, which is a significant problem for crystal growth. This paper addresses the effect of substrate tilting on the material properties of GaAsSb alloys closely lattice-matched to InP substrates by molecular beam epitaxy (MBE). InP(100) substrates tilted 0°off-(on-axis), 2°off-, 3°off-, and 4°off-axis were used for MBE growth, then the material qualities of GaAsSb epitaxial layers were compared using various techniques, including high resolution X-ray diffraction, photoluminescence (PL), Raman scattering, and transmission-line measurements (TLM). Substrate tilting improved the GaAsSb alloys with crystalline quality, shown by a narrower x-ray linewidth and enhanced optical quality as evidenced by a strong PL peak. The results of TLM show that the lowest sheet resistance was achieved at a 2° off-axis tilt. The results are expected to be applicable in devices that incorporate GaAsSb in the active layer grown by MBE.

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High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3

Cited by 18 publications

References 7 publications

The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor

The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor

Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs)

Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

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