High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

LIU, Cui-cui; Lin, Nan; Ma, Xiaoyu; Hongqi, Jing; Liu, Suping

doi:10.37188/cjl.20210306

Cited by 3 publications

(2 citation statements)

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“…In the subsequent rapid thermal annealing process, the vacancies will diffuse downward due to the influence of concentration gradient and activation energy, causing the mutual diffusion of material compositions. In the diffusion process, it is primarily manifested as the interdiffusion of Ga and Al atoms of the epitaxial layer GaAs material and the waveguide layer AlGaAs material [14] :…”

Section: Diffusion Of Point Defectsmentioning

confidence: 99%

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

He,

Liu,

et al. 2023

J. Semicond.

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Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO2 film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.

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Section: Diffusion Of Point Defectsmentioning

confidence: 99%

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

He,

Liu,

et al. 2023

J. Semicond.

Self Cite

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show abstract

“…Compared with the ECV test result of the original sample, near 1.3 μm, the p-type doping concentration decreased while the n-type doping concentration increased. This indicates that Si impurities diffused into the sample and became n-type donors [22] .…”

Section: Effect Of Composited Dielectric Layers On Quantum Well Inter...mentioning

confidence: 99%

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer

He¹,

Liu²,

Li³

et al. 2022

J. Semicond.

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The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability. To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers, Si–Si3N4 composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window. Si with a thickness of 100 nm and Si3N4 with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source, respectively. Compared with traditional Si impurity induced quantum well intermixing, this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 °C and annealing time of 10 min. Under this annealing condition, the wavelength of the gain luminescence region basically does not shift to short wavelength, and the surface morphology of the whole epitaxial wafer remains fine after annealing. The application of this process condition can reduce the difficulty of production and save cost, which provides an effective method for upcoming fabrication.

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Zn杂质诱导GaInP/AlGaInP红光半导体激光器量子阱混杂的研究

HE Tianjiang,

LIU Suping,

LI Wei

et al. 2024

光子学报

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High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

Cited by 3 publications

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Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer

Zn杂质诱导GaInP/AlGaInP红光半导体激光器量子阱混杂的研究

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High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

Cited by 3 publications

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Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer

Zn杂质诱导GaInP/AlGaInP红光半导体激光器量子阱混杂的研究

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Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer