Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

Abstract

Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO2 film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.

The role of bio-inspired micro-/nano-structures in flexible tactile sensors

“…Solving these key problems will revolutionize the next generation of intelligent bionic electronic 122–126 and optical devices. 127–138…”

Research on the fabrication of high-power semiconductor lasers by impurity-free vacancy disordering

“…The rapid progression of QWI technology has led to the development of various approaches, including rapid thermal annealing, 5 , 6 impurity-induced disordering, 7 , 8 ion implantation-induced disordering, 9 , 10 impurity-free vacancy disordering (IFVD), 11 , 12 laser-induced disordering (LID), 13 and plasma-enhanced quantum well intermixing 14 . Among these, IFVD has gained extensive attention due to its minimal impact on laser device performance, attributed to its absence of impurity introduction.…”