High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range

Mohseni, Hooman; Razeghi, Manijeh; Brown, Gail J.; Park, Y. S.

doi:10.1063/1.1362179

Cited by 86 publications

(49 citation statements)

References 15 publications

(10 reference statements)

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“…The use of binary layers in the superlattice has significantly enhanced the uniformity and reproducibility of the energy gap. The 90% to 10% cut-off energy width of these devices is only about 2 kT, which has been maintained very well compared with previous detectors operating at different cutoff wavelength [5].…”

Section: Methodssupporting

confidence: 51%

“…Type 1I detectors based on InAs/GaSb superlattices have shown the potential to be the next generation of infrared sensors, surpassing HgCdTe performance over a wide range of optical wavelengths. In the VLWIR range, photodiodes based on type II InAs/GaSb superlattices with a 16gm 50% cutoff wavelength were reported with a detectivity of 1.5xl0' cmHz'2/W at 80K [5]. Photodiodes with a 22,m cutoff wavelength have also been demonstrated at 80K [6].…”

Section: Introductionmentioning

confidence: 92%

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Quantum dots of InAs/GaSb type II superlattice for infrared sensing

et al. 2001

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Throughout the past years, significant progress has been made in Type II (InAs/GaSb) photovoltaic detectors in both LWIR and VLWIR ranges. BLIP performance at 60K for 16Mm photovoltaic type II detectors has been successfully demonstrated for the first time. The detectors had a 50% cut-off wavelength of 18.8 p m and a peak current responsivity of 4 A/W at 80K. A peak detectivity of 4.5xl0"'cm.Hz 1 / 2 /W was achieved at 80K at a reverse bias of 1 10mV. Detectors of cutoff wavelength up to 25pm have been demonstrated at 77K. The great performance of single element detectors appeals us to lower dimensional structures for both higher temperature performance and possible wavelength tunability. Simple calculations show that quantum effects will become significant when the lateral confinement is within tens of nanometers. The variation of applied gate voltage will move the electron and hole energy levels unevenly. The cutoff wavelength of the superlattice will vary accordingly. Auger recombination will also decrease and higher temperature operation becomes possible. In this talk, the latest results will be discussed.

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Section: Methodssupporting

confidence: 51%

Section: Introductionmentioning

confidence: 92%

Quantum dots of InAs/GaSb type II superlattice for infrared sensing

et al. 2001

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“…The material is grown with As and Sb valved cracker sources on p-type GaSb substrates [82]. The photodiode structures were grown at 395…”

Section: Growthmentioning

confidence: 99%

Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

Razeghi

2003

Eur. Phys. J. AP

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Abstract. The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3-5 µm range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.

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“…3 Extensive investigations of InAs/(In)GaSb type-II SLs have been carried out, including theoretical calculations of the band structure 4 and minority carrier lifetimes, 5 and significant success has been achieved for device performance in mid-, long-and very-long-wavelength infrared (VLWIR) ranges. [6][7][8][9] Strain-balanced InAs/InAs 1Àx Sb x SLs have been proposed as another possible alternative to HgCdTe, 10 and have already shown great promise for mid-IR laser and photodetector structures, 11 with photoluminescence emission in the range of 5-10 lm being achieved for SL structures containing Sb concentrations of 14À27%. 12 Recently, InAs/ InAs 1Àx Sb x SLs grown by metalorganic chemical vapor depostition (MOCVD) have been studied in more detail: these SLs showed excellent structural properties and strong optical response.…”

Section: Introductionmentioning

confidence: 99%

Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy

Ouyang¹,

Steenbergen²,

Zhang³

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Strain-balanced InAs/InAs1−xSbx type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs1−xSbx SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs1−xSbx alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs1−xSbx layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs1−xSbx deposited on InAs were more abrupt, relative to InAs deposited on InAs1−xSbx: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions.

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High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range

Cited by 86 publications

References 15 publications

Quantum dots of InAs/GaSb type II superlattice for infrared sensing

Quantum dots of InAs/GaSb type II superlattice for infrared sensing

Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy

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