High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer

Lin, Shih‐Yen; Tsai, Yau-Ren; Lee, Si‐Chen

doi:10.1063/1.1365950

Cited by 65 publications

(42 citation statements)

References 9 publications

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“…8,9 A major difficulty that could arise in designing such applications using QD heterostructures is the nonuniform size distribution of QDs, which arises during growth. This results in significant broadening of optical response, 10 an increase in laser threshold current and decrease in optical gain.…”

Section: Introductionmentioning

confidence: 99%

Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots

Srujan

Ghosh

Sengupta

et al. 2010

Journal of Applied Physics

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Optical observation of single-carrier charging in type-II quantum ring ensembles Appl. Phys. Lett. 100, 082104 (2012) High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities J. Appl. Phys. 111, 043107 (2012) Surface diffusion and layer morphology of ( (112)) GaN grown by metal-organic vapor phase epitaxy J. Appl. Phys. 111, 033526 (2012) Single photon emission from InGaN/GaN quantum dots up to 50K Appl. Phys. Lett. 100, 061115 (2012) Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN J. Appl. Phys. 111, 033517 (2012) Additional information on J. Appl. Phys. We present a model for the effect of thermal annealing on a single-layer InAs/GaAs quantum dot ͑QD͒ heterostructure and study the corresponding variation in full photoluminescence ͑PL͒ spectrum. In/Ga interdiffusion due to annealing is modeled by Fickian diffusion and the Schrödinger equation is solved separately for electrons and holes to obtain ground state PL peaks of the heterostructure at different annealing temperatures. We theoretically examine the decrease in strain effects and carrier confinement potentials with annealing. PL spectra of the entire ensemble of QDs, annealed at different temperatures, are calculated from a lognormal distribution of QD heights derived from experimental atomic force microscopy ͑AFM͒ data. Results from our calculations, which illustrate the blueshift in emission wavelength and linewidth variation in PL with annealing, are in excellent agreement with experimental PL observations on the same samples. This highlights the potential of the model to assist in precisely engineering the optical properties of QD materials for specific device applications. Moreover, the simplicity of the model and its multiple useful features including computation of material interdiffusion, band profiles and full PL spectra make it a valuable tool to study annealing effects on QD heterostructures.

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Section: Introductionmentioning

confidence: 99%

Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots

Srujan

Ghosh

Sengupta

et al. 2010

Journal of Applied Physics

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“…D* was found to be ~ 1.9×10 11 Jones at 2.7 µm for the detector with the CBB, and ~ 4.1×10 8 Jones without the CBB. Thus, a two orders of magnitude higher D* is obtained with the CBB at zero bias (Figure 3(b)).…”

Section: Resultsmentioning

confidence: 93%

“…AlGaAs current blocking layers were utilized in quantum dot IR photodetectors (QDIPs) to enhance performance. [4][5][6][7][8] Similarly, majority carrier (hole) blocking layers have been implemented in type II InAs/GaSb superlattice (T2SL) IR photodetectors. 9 Furthermore, electron blocking and hole blocking unipolar barriers were implemented in complementary barrier infrared detectors (CBIRD) 10 and p-typeintrinsic-n-type (PbIbN) photodiodes 11 .…”

Section: Introductionmentioning

confidence: 99%

Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier

Chauhan

Perera

et al. 2017

SPIE Proceedings

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For the infrared detection in the 3-5 µm range, p-GaAs/Al x Ga 1-x As heterojunction is an attractive material system due to light hole/heavy hole and spin-orbit split-off intra-valance band transitions in this wavelength range. Varying the Al mole fraction (x) provides the tuning for the wavelength threshold, while graded Al x Ga 1-x As potential barriers create an asymmetry to allow a photovoltaic operation. The photovoltaic mode of operation offers the advantage of thermal noise limited performance. In our preliminary work, a 2 -6 µm photovoltaic detector was studied. Implementation of an additional current blocking barrier improved the specific detectivity (D*) by two orders of magnitude, to 1.9×10 11 Jones at 2.7 µm, at 77K. At zero bias, the resistance-area product (R 0 A) had a value of ~ 7.2×10 8 cm 2 , which is five orders higher in magnitude (with a corresponding reduction of the responsivity by only a factor of ~ 1.5), compared to the R 0 A value without the blocking barrier. A photoresponse was observed up to 130K.

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“…In recent years, significant attention has been paid to incorporating current blocking architectures into detector designs. For example, AlGaAs current blocking layers have been utilized in quantum dot IR photodetectors (QDIPs) both to enhance performance [1][2][3][4][5][6] and to achieve elevated operating temperatures. [7][8][9] Similarly, in type II InAs/ GaSb superlattice (T2SL) IR photodetectors, majority carrier (hole) blocking layers have been implemented, 10 as well as electron blocking and hole blocking unipolar barriers in complementary barrier infrared detectors (CBIRD) 11 and p-type-intrinsic-n-type (PbIbN) photodiodes.…”

mentioning

confidence: 99%

Effect of a current blocking barrier on a 2–6 μm p-GaAs/AlGaAs heterojunction infrared detector

Chauhan

Perera

et al. 2016

Applied Physics Letters

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We report the performance of a 30 period p-GaAs/Al x Ga 1Àx As heterojunction photovoltaic infrared detector, with graded barriers, operating in the 2-6 lm wavelength range. Implementation of a current blocking barrier increases the specific detectivity (D*) under dark conditions by two orders of magnitude to $1.9 Â 10 11 Jones at 2.7 lm, at 77 K. Furthermore, at zero bias, the resistance-area product (R 0 A) attains a value of $7.2 Â 10 8 X cm 2 , a five orders enhancement due to the current blocking barrier, with the responsivity reduced by only a factor of $1.5. Published by AIP Publishing.[http://dx.doi.org/10.1063/1.4952431] Infrared (IR) detectors and imaging systems are becoming increasingly important in a diverse range of military and civilian applications. In recent years, significant attention has been paid to incorporating current blocking architectures into detector designs. For example, AlGaAs current blocking layers have been utilized in quantum dot IR photodetectors (QDIPs) both to enhance performance [1][2][3][4][5][6] and to achieve elevated operating temperatures. [7][8][9] Similarly, in type II InAs/ GaSb superlattice (T2SL) IR photodetectors, majority carrier (hole) blocking layers have been implemented, 10 as well as electron blocking and hole blocking unipolar barriers in complementary barrier infrared detectors (CBIRD) 11 and p-type-intrinsic-n-type (PbIbN) photodiodes. 12 Furthermore, dark current suppressing structures were also demonstrated, such as conduction band barriers in nBn photodetectors 13,14 and XBn barrier photodetectors. 15 In general, the main goal in these architectures is to lower the dark current, but with a relatively small compromise to the photocurrent, thus achieving a significant improvement in the specific detectivity (D*).Due to the mature growth and established processing technology of p-GaAs/Al x Ga 1Àx As, these materials systems have become increasingly attractive for demonstrating heterojunction interfacial workfunction IR photodetectors (HEIWIP), 16 which operate up to room temperature. 17 Furthermore, replacing the constant Al x Ga 1Àx As barrier with a graded barrier, achieved by tuning the Al mole fraction (x), was found to enable photovoltaic operation as well. 18 This is advantageous over photoconductive operation as it offers thermal noise limited performance and reduced power consumption. In this letter, we report the effect of a current blocking barrier (CBB) on a 30 period p-GaAs/Al x Ga 1Àx As IR detector with graded barriers, which shows a photoresponse at 77 K in the $2-6 lm range under photovoltaic operation. We observe an approximately five orders of magnitude higher resistance-area product (R 0 A) at zero bias, resulting in a two orders of magnitude improvement in D*, with the responsivity compromised only by a factor of $1.5 at zero bias, compared to performance without the CBB.A p-GaAs/Al x Ga 1Àx As heterojunction IR detector was grown on a semi-insulating GaAs substrate by molecular beam epitaxy 19 ( Fig. 1(a)). The active region of the ph...

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High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer

Cited by 65 publications

References 9 publications

Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots

Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots

Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier

Effect of a current blocking barrier on a 2–6 μm p-GaAs/AlGaAs heterojunction infrared detector

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