High-Performance Graphene-Based Biosensor Using a Metasurface of Asymmetric Silicon Disks

Parizi, Mohammad Salemizadeh; Salemizadehparizi, Fatemeh; Zarasvand, Mahdi Molaei; Abdolhosseini, Saeed; Bahadori-Haghighi, Shahram; Khalilian, Alireza

doi:10.1109/jsen.2021.3134205

Cited by 17 publications

(1 citation statement)

References 71 publications

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“…In this regard, the complex dielectric constant of graphene is obtained from 61 : and imported to the simulations as the optical model. The parameter is the effective thickness of graphene that is taken as 0.34 nm, is the permittivity of free space, is the angular frequency and is the complex conductivity that is calculated by the Kubo formula 61 , 62 where the first and second terms on the right hand side are respectively the intraband and interband conductivities, is the reduced plank constant, e is the electron charge, is the relaxation time that is assumed to be 0.5 ps 61 and is the chemical potential. As a result and according to , the average value of graphene mobility in the ON state is approximately /v.s.…”

Section: Methodsmentioning

confidence: 99%

High-performance Mach–Zehnder modulator using tailored plasma dispersion effects in an ITO/graphene-based waveguide

Mohammadi-Pouyan

Bahadori-Haghighi

Heidari

et al. 2022

Sci Rep

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A high-performance electro-optic Mach–Zehnder modulator (MZM) with outstanding characteristics is proposed. The MZM is in a push-pull configuration that is constructed using an ITO/graphene-based silicon waveguide. A novel idea for engineering of the plasma dispersion effect in an ITO/graphene-based waveguide is proposed so that the modulation characteristics of the MZM are highly improved. Plasma dispersion effects of ITO and graphene layers are tailored in such a way that a large difference between real parts of guided mode effective index of the two arms is achieved while their corresponding imaginary parts are equal. As a result, a very low $${{\mathrm {V}}}_{\pi }L_{\pi }$$ V π L π of $$10 \, \hbox {V} \upmu \hbox {m}$$ 10 V μ m is achieved. To the best of our knowledge, this is one of the lowest $${{\mathrm {V}}}_{\pi }L_{\pi }$$ V π L π reported for an electro-optic modulator. In addition, the proposed modulator exhibits a very high extinction ratio of more than 30 dB, low insertion loss of 2.8 dB and energy consumption of as low as 10 fJ/bit, which are all promising for optical communication and processing systems.

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