High-Performance GeSn Photodetector Covering All Telecommunication Bands

Wang, Nan; Xue, Chunlai; Wan, Fei; Zhao, Yue; Xu, Geyang; Liu, Zhi; Zheng, Jun; Zuo, Yuhua; Cheng, Bingying; Wang, Qiming

doi:10.1109/jphot.2021.3065223

Cited by 16 publications

(13 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Commonly used SWIR optoelectronic materials including InGaAs, − HgCdTe, − PbS, − and mainstream InGaAs SWIR imaging chips have been commercially available for a long time. − However, there are some technical difficulties, such as small substrate diameter, high wafer cost, expensive chip manufacturing cost, low yield rate, and toxicity. , In addition, these SWIR chips are not compatible with the CMOS process production lines, which require a separate production line to avoid inevitable contamination. Group IV Ge (Sn) semiconductor material was regarded as one of the most promising candidates to overturn the current SWIR imaging technology due to their excellent photoelectric response in the SWIR band and compatibility with the standard CMOS process, thereby making Ge an ideal absorption layer for the high-performance SWIR photodetectors. − …”

Section: Introductionmentioning

confidence: 99%

High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection

Yu,

Zhao,

Miao

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

High-responsivity and low dark current resonant-cavity-enhanced (RCE) Ge PIN photodiodes with a monolayer graphene absorber were demonstrated on a 200 mm insulator. Ge was grown on the donor Si wafer, whereas the acceptor wafer contained a two-period poly-Si/SiO 2 as a distributed Bragg reflector (DBR) mirror. Then, a direct wafer-bonding technique was adopted to transfer the Ge layers on the poly-Si/SiO 2 DBR mirror, thereby forming the RCE Ge PIN photodetectors on the insulator with mesa diameters ranging from 10 to 100 μm. At −1 V reverse bias voltage, average responsivities of 0.67 and 0.85 A/W at 1550 and 1310 nm were achieved due to the combined function of poly-Si/SiO 2 DBR mirror, high-quality Ge active layer, and 2D graphene. The monolayer graphene was transferred from a Cu foil on the chips, which increased the responsivity of the Ge PIN photodetectors at 1310 and 1550 nm by 11.6 and 7.6%, respectively. The dark currents of the detectors at room temperature were in the nanoampere range, for example, the 10 μm detector exhibited a dark current of 5.75 nA. The novelty of our results is based on the integration of a novel DBR mirror below the Ge PIN photodetectors with a graphene absorber on the top. This indicates a significant improvement in the performance of the current Ge PIN photodetectors and a promising technique route to optimize the low-cost and CMOS-compatible short-wave infrared imaging chips in the near future.

show abstract

Section: Introductionmentioning

confidence: 99%

High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection

Yu,

Zhao,

Miao

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…Moreover, GeSn alloys show bandgap tunability, a high carrier saturation velocity [ 9 ], high carrier mobility [ 10 ], and a large absorption coefficient [ 11 ]. These unique characteristics have encouraged the development of efficient GeSn-based SWIR and MIR PDs [ 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ]. Furthermore, a special momentum (k)-space carrier separation scheme enhances the optical performance of the GeSn PDs [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications

Lin,

Ghosh,

Chang

2024

Sensors

View full text Add to dashboard Cite

GeSn alloys have recently emerged as complementary metal–oxide–semiconductor (CMOS)-compatible materials for optoelectronic applications. Although various photonic devices based on GeSn thin films have been developed, low-dimensional GeSn quantum structures with improved efficiencies hold great promise for optoelectronic applications. This study theoretically analyses Ge-capped GeSn pyramid quantum dots (QDs) on Ge substrates to explore their potential for such applications. Theoretical models are presented to calculate the effects of the Sn content and the sizes of the GeSn QDs on the strain distributions caused by lattice mismatch, the band structures, transition energies, wavefunctions of confined electrons and holes, and transition probabilities. The bandgap energies of the GeSn QDs decrease with the increasing Sn content, leading to higher band offsets and improved carrier confinement, in addition to electron–hole wavefunction overlap. The GeSn QDs on the Ge substrate provide crucial type–I alignment, but with a limited band offset, thereby decreasing carrier confinement. However, the GeSn QDs on the Ge substrate show a direct bandgap at higher Sn compositions and exhibit a ground-state transition energy of ~0.8 eV, rendering this system suitable for applications in the telecommunication window (1550 nm). These results provide important insights into the practical feasibility of GeSn QD systems for optoelectronic applications.

show abstract

“…Developing high-speed photodetectors (PDs) operating at room temperature in the extended-SWIR (e-SWIR) spectral range is critical to implement a variety of applications including high-resolution active light detection and ranging (LIDAR), time-resolved spectroscopy, environmental monitoring of greenhouse gases, medical optical tomography, and new generation optical communication systems. − While group IV detectors operating at 2 μm provide a bandwidth reaching 30 GHz, , the state-of-the-art photodetectors operating above 2.3 μm with a bandwidth above 5 GHz consist exclusively of In-rich InGaAs on InP, − InGaAs/GaAsSb on InP, − and GaInAsSb on GaSb. , These devices face cost and scalability challenges and exhibit a low bandwidth above 2.3 μm that does not exceed 6 GHz . Establishing silicon-integrated high-speed detectors is an attractive paradigm for large-scale fabrication, cost effectiveness, and compatibility with complementary metal-oxide semiconductor (CMOS) processing .…”

Section: Introductionmentioning

confidence: 99%

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

et al. 2022

View full text Add to dashboard Cite

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition, artificial intelligence, and medical imaging. However, developing these emerging technologies and their large-scale use depend on the availability of high-speed, low-noise, and cost-effective photodetectors. With this perspective, here we demonstrate GeSn photodiodes grown on silicon wafers featuring a high broadband operation covering the extended-SWIR range with a peak responsivity of 0.3 A/W at room temperature. These GeSn devices exhibit a high bandwidth reaching 7.5 GHz at 5 V bias with a 2.6 μm cutoff wavelength, and their integration in ultrafast time-resolved spectroscopy applications is demonstrated. In addition to enabling time-resolved electroluminescence at 2.3 μm, the high-speed operation of GeSn detectors was also exploited in the diagnostics of ultrashort pulses of a supercontinuum laser with a temporal resolution in the picosecond range at 2.5 μm. Establishing these capabilities highlights the potential of manufacturable GeSn photodiodes for silicon-integrated high-speed extended-SWIR applications.

show abstract

High-Performance GeSn Photodetector Covering All Telecommunication Bands

Cited by 16 publications

References 21 publications

High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection

High-Performance Ge PIN Photodiodes on a 200 mm Insulator with a Resonant Cavity Structure and Monolayer Graphene Absorber for SWIR Detection

Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

Contact Info

Product

Resources

About