High performance Ge junctionless gate-all-around NFETs with simultaneous I&lt;inf&gt;on&lt;/inf&gt; =1235 μA/μm at V&lt;inf&gt;ov&lt;/inf&gt;=V&lt;inf&gt;ds&lt;/inf&gt;=1V, SS=95 mV/dec, high I&lt;inf&gt;on&lt;/inf&gt;/I&lt;inf&gt;off&lt;/inf&gt;=2×10<sup>6</sup>, and reduced noise power density using S/D dopant recovery by selective laser annealing

Wong, I-Hsieh; Lu, Fung Jou; Huang, S.-H.; Ye, Hung-Yu; Lu, Chun-Ti; Yan, Jhih-Yang; Shen, Yu-Cheng; Peng, Yu-Jiun; Lan, Huang-Siang

doi:10.1109/iedm.2016.7838536

Cited by 2 publications

(2 citation statements)

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“…The CET is approximation 1.3 nm. The optimized selective laser annealing further lowered S/D resistance by increasing active dopant concentration (∼2E20 cm −3 ) at S/D using the Pt as the mask for the gate stack [17,18]. Finally, the NiGe contact was formed by sputtering and PMA with FGA at 300 °C for 1 min to reduce the contact resistance.…”

Section: Devices Fabricationmentioning

confidence: 99%

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Novel vertically stacked Ge_0.85Si_0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedI_on(1.7X atV_OV=V_DS= 0.5 V) by Ge_0.85Si_0.15channels

Liu¹,

Huang²,

Lu³

et al. 2020

Semicond. Sci. Technol.

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An engineering solution is provided to improve the electrostatic behaviors of Ge-based channels gate-all-around FETs. We demonstrate the vertically stacked Ge 0.85 Si 0.15 channels above a Si channel, which has good subthreshold behaviors. The two Ge 0.85 Si 0.15 channels are tensily strained to improve I on . With optimized channel dimensions, the threshold voltage of Ge 0.85 Si 0.15 channels is more positive than the Si channel by quantum confinement. Therefore, the underneath Si channel with good electrostatic control dominates the subthreshold region. Good subthreshold slope=76 mV/dec and low drain-induced barrier lowering=36 mV/V are achieved. For on-state, the stacked high-mobility GeSi channels turn on after the Si channel to achieve I on of 13.9 μA per stack at V OV =V DS =0.5 V.

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Section: Devices Fabricationmentioning

confidence: 99%

“…Figure 10 shows the benchmark of the I on per stack versus SS for group IV nGAAFETs [7,17,[25][26][27][28][29][30][31][32][33]. The optimized device achieves low SS=76 mV/dec, and the high I on of 15.2 μA per stack at V OV =V DS =0.5 V. The device has competitive performance in group IV nGAAFETs.…”

Section: Benchmarkmentioning

confidence: 99%

Novel vertically stacked Ge_0.85Si_0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedI_on(1.7X atV_OV=V_DS= 0.5 V) by Ge_0.85Si_0.15channels

Liu¹,

Huang²,

Lu³

et al. 2020

Semicond. Sci. Technol.

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Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly

et al. 2021

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Multibridge channel field‐effect transistors (MBCFETs) enable improved gate control and flow of a large drive current and they are regarded as promising candidates for next‐generation transistor architecture. However, in achieving a larger drive current with a thinner channel, limitations arise from the decrease in mobility when the thickness of the Si nanosheet is less than 5 nm. In addition, an increase in the leakage current is unavoidable when a large number of channels are stacked. Here, a 2D ultrathin MBCFET is demonstrate, constructed based on 2 nm/2 nm MoS2 channels. The normalized drive current (23.11 µA*µm µm−1) in each level channel of this MBCFET exceeds that of the latest seven‐level‐stacked Si MBCFET, while the leakage current is only 0.4% of this value, with the subthreshold swing reaching 60 mV dec−1 and an on/off ratio reaching up to 4 × 108 at room temperature. Furthermore, the drive current of this 2D ultrathin MBCFET can be further increased by regulating the polarity of the operation voltage to reduce the injection barrier. The combination of 2D materials and an MBC structure has the potential for use in high‐performance and low‐power‐consumption electronics.

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High performance Ge junctionless gate-all-around NFETs with simultaneous I<inf>on</inf> =1235 μA/μm at V<inf>ov</inf>=V<inf>ds</inf>=1V, SS=95 mV/dec, high I<inf>on</inf>/I<inf>off</inf>=2×10⁶, and reduced noise power density using S/D dopant recovery by selective laser annealing

Cited by 2 publications

References 8 publications

Novel vertically stacked Ge_0.85Si_0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedI_on(1.7X atV_OV=V_DS= 0.5 V) by Ge_0.85Si_0.15channels

Novel vertically stacked Ge_0.85Si_0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedI_on(1.7X atV_OV=V_DS= 0.5 V) by Ge_0.85Si_0.15channels

Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly

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High performance Ge junctionless gate-all-around NFETs with simultaneous I<inf>on</inf> =1235 μA/μm at V<inf>ov</inf>=V<inf>ds</inf>=1V, SS=95 mV/dec, high I<inf>on</inf>/I<inf>off</inf>=2×106, and reduced noise power density using S/D dopant recovery by selective laser annealing

Cited by 2 publications

References 8 publications

Novel vertically stacked Ge0.85Si0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedIon(1.7X atVOV=VDS= 0.5 V) by Ge0.85Si0.15channels

Novel vertically stacked Ge0.85Si0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedIon(1.7X atVOV=VDS= 0.5 V) by Ge0.85Si0.15channels

Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly

Contact Info

Product

Resources

About

High performance Ge junctionless gate-all-around NFETs with simultaneous I<inf>on</inf> =1235 μA/μm at V<inf>ov</inf>=V<inf>ds</inf>=1V, SS=95 mV/dec, high I<inf>on</inf>/I<inf>off</inf>=2×10⁶, and reduced noise power density using S/D dopant recovery by selective laser annealing

Novel vertically stacked Ge_0.85Si_0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedI_on(1.7X atV_OV=V_DS= 0.5 V) by Ge_0.85Si_0.15channels

Novel vertically stacked Ge_0.85Si_0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedI_on(1.7X atV_OV=V_DS= 0.5 V) by Ge_0.85Si_0.15channels