2007
DOI: 10.1063/1.2804004
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High-performance fullerene C60 thin-film transistors operating at low voltages

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Cited by 27 publications
(25 citation statements)
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References 19 publications
(21 reference statements)
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“…This relatively high electron mobility is comparable to those reported for OTFTs based on C 60 [11][12][13] and can be regarded as one of the important origins for the high current densities achieved in these vertical diodes.…”
supporting
confidence: 65%
“…This relatively high electron mobility is comparable to those reported for OTFTs based on C 60 [11][12][13] and can be regarded as one of the important origins for the high current densities achieved in these vertical diodes.…”
supporting
confidence: 65%
“…For the channel layer, we employed C 60 , which is the most standard n-type organic semiconductor, and is reported to show the highest electron mobility for the device fabricated in ultra high vacuum condition [13][14][15][16][17]. For the interfacial layer, we employed two types of hole transporting materials, m-MTDATA and NPD, which are generally used for organic lightemitting diodes [18].…”
Section: Introductionmentioning
confidence: 99%
“…This possibility originates from the fact that C 60 has an electronic degeneracy in its cationic state because of its high symmetry I h [21,22], but C 60 hydrides usually do not because of the reduction in symmetry by the addition of hydrogen. Electron mobility in C 60 film is about 1 cm 2 V −1 s −1 [20,23,24] so that C 60 is one of the most useful electron-transport materials. However, to achieve low-cost production and large-area devices, it is necessary for C 60 materials to have a solution-processable form, such as [6,6]-phenyl C 61 -butyric acid methyl ester (PCBM) [25].…”
Section: Motivationmentioning
confidence: 99%