High-Performance Focal Plane Array Based on InAs–GaSb Superlattices With a 10-$\mu{\hbox {m}}$ Cutoff Wavelength

Delaunay, Pierre Yves; Nguyen, Binh Minh; Hoffman, Darin; Razeghi, Manijeh

doi:10.1109/jqe.2008.916701

Cited by 35 publications

(27 citation statements)

References 18 publications

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“…Moreover, InAs/GaSb and InAs/GaInSb type-II superlattices provide numerous advantageous optoelectronic properties such as high absorption coefficient, higher effective mass of electrons and holes, slower Auger recombination rate with a proper design of the valence band structure, a lower dark current, and higher operating temperatures. These make InAs/ GaSb and InAs/GaInSb type-II superlattices comparable to established HgCdTe IR photodetectors with the high quantum efficiency [3][4][5][6].…”

Section: Introductionmentioning

confidence: 94%

Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation

Lee¹,

Price²

2018

Two-Dimensional Materials for Photodetector

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This chapter focuses on characterization, modeling, and simulation about the type-II superlattices photodetector application. Despite dramatic improvements in type-II superlattices in the past 15 years, challenges still exist in InAs/GaSb and InAs/GaInSb superlattices: The diffusion current, Shockley-Read-Hall (SRH) recombination current, tunneling current, and surface leakage current at elevated temperature. To establish a set of modeling and simulation input parameters, in-depth materials and device characterization at different conditions are carried out for initial materials and device models. Based on input parameters, we will describe the development of analytical and numerical models of InAs/GaSb and InAs/GaInSb type-II superlattice-structured materials and device systems. At the end of this chapter, the fitting of modeled and simulated data will be performed to compare empirical data and modeling results at a set of temperature, which will provide guidance to achieve the higher performance.

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Section: Introductionmentioning

confidence: 94%

Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation

Lee¹,

Price²

2018

Two-Dimensional Materials for Photodetector

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“…The minority carrier diffusion length is in the range of several micrometers. Improving these fundamental pa- Recently, the demonstration of a high performance type-II FPA with cut-off wavelength of 10 µm has been reported [55]. The R 0 A product of diodes passivated with SiO 2 was 23 Ω cm 2 .…”

Section: Type-ii Superlatticesmentioning

confidence: 99%

Infrared Detectors for the Future

Rogalski

2009

Acta Phys. Pol. A

124

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In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, VO x microbolometer arrays are clearly the most used technology. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in microelectromechanical systems have led to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

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“…First 256´256 SL MWIR [35,71] Recently, the demonstration of a high performance type-II FPA with cutoff wavelength of 10 µm has been reported [72]. The surface leakage current of photodiodes is suppressed using a double heterostructure design.…”

Section: New Materials Systems For Third Generation Infrared Photodetementioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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High-Performance Focal Plane Array Based on InAs–GaSb Superlattices With a 10-$\mu{\hbox {m}}$ Cutoff Wavelength

Cited by 35 publications

References 18 publications

Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation

Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation

Infrared Detectors for the Future

New material systems for third generation infrared photodetectors

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