High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors

Yang, Shengxue; Tongay, Sefaattin; Qu, Yue; Li, Yongtao; Li, Bo; Lu, Fangyuan

doi:10.1038/srep05442

Cited by 95 publications

(88 citation statements)

References 41 publications

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“…[1][2][3][4][5][6][7] Van der Waals force is dominant between the layers, while covalent bonds control the interaction within the layers. [8][9][10][11][12] MoS 2 is a semiconducting material, and different band-gap energies have been found for different numbers of MoS 2 layers.…”

Section: Introductionmentioning

confidence: 99%

Controlled Layer-by-Layer Etching of MoS₂

Lin

Kang

Jeon

et al. 2015

ACS Appl. Mater. Interfaces

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Two-dimensional (2-D) metal dichalcogenides like molybdenum disulfide (MoS 2 ) may provide a pathway to high-mobility channel materials that are needed for beyondcomplementary metal-oxide-semiconductor (CMOS) devices. Controlling the thickness of these materials at the atomic level will be a key factor in the future development of MoS 2 devices. In this study, we propose a layer-by-layer removal of MoS 2 using the atomic layer etching (ALET) that is composed of the cyclic processing of chlorine (Cl)-radical adsorption and argon (Ar) + ion-beam desorption. MoS 2 etching was not observed with only the Clradical adsorption or low-energy (< 20 eV) Ar + ion-beam desorption steps; however, the use of sequential etching that is composed of the Cl-radical adsorption step and a subsequent Ar + ion-beam desorption step resulted in the complete etching of one monolayer MoS 2 . Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) indicated the removal of one monolayer MoS 2 with each ALET cycle; therefore, the number of MoS 2 layers could be precisely controlled by using this cyclical etch method. In addition, no noticeable damage or etch residue was observed on the exposed MoS 2 .

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Section: Introductionmentioning

confidence: 99%

Controlled Layer-by-Layer Etching of MoS₂

Lin

Kang

Jeon

et al. 2015

ACS Appl. Mater. Interfaces

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“…23 This clustering of Re atoms has also been discovered in ReS2 crystals, 20,24 contributing to distort the lattice geometry and stabilize the crystals. The distorted 1T nature of ReSe2 has conferred this materials strong in-plane anisotropy in their optical [25][26][27] and electronic [28][29][30][31][32] properties. Figure 1c shows the Brillouin zone of the monolayer ReSe2, which is a hexagon with unequal side length.…”

Section: Introductionmentioning

confidence: 99%

Interlayer interactions in anisotropic atomically thin rhenium diselenide

et al. 2015

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Abstract. Recently, two-dimensional (2D) materials with strong in-plane anisotropic properties such as black phosphorus have demonstrated great potential for developing new devices that can take advantage of its reduced lattice symmetry with potential applications in electronics, optoelectronics and thermoelectrics. However, the selection of 2D material with strong in-plane anisotropy has so far been very limited and only sporadic studies have been devoted to transition metal dichalcogenides (TMDC) materials with reduced lattice symmetry, which is yet to convey the full picture of their optical and phonon properties, and the anisotropy in their interlayer interactions. Here, we study the anisotropic interlayer interactions in an important TMDC 2D material with reduced in-plane symmetry -atomically thin rhenium diselenide (ReSe2) -by investigating its ultralow frequency interlayer phonon vibration modes, the layernumber dependent optical bandgap, and the anisotropic photoluminescence (PL) spectra for the first time. The ultralow frequency interlayer Raman spectra combined with the first study of polarization-resolved high frequency Raman spectra in monoand bi-layer ReSe2 allows deterministic identification of its layer number and crystal orientation. PL measurements show anisotropic optical emission intensity with bandgap increasing from 1.26 eV in the bulk to 1.32 eV in monolayer, consistent with the theoretical results based on first-principle calculations. The study of the layer-number dependence of the Raman modes and the PL spectra reveals the relatively weak van der Waal's interaction and 2D quantum confinement in atomically-thin ReSe2. The experimental observation of the intriguing anisotropic interlayer interaction and tunable optical transition in mono-and multi-layer ReSe2 establishes the foundation for further exploration of this material to develop anisotropic optoelectronic devices in the nearinfrared spectrum range where many applications in optical communications and infrared sensing exist.

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“…First, 2D confinement, direct band-gap nature 5 , large surfaceto-volume ratio 6 , and weak screening of charge carriers enhance the light-matter interactions 5,7-10 in these materials that lead to extraordinarily high absorption. Second, strong light-matter interaction creates electron-hole (e-h) pairs and forms two-body bound states, known as excitons (a hydrogenic entity made of an e-h pair).…”

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confidence: 99%

Large array fabrication of high performance monolayer MoS2 photodetectors

Yore

Smithe

Jha

et al. 2017

Applied Physics Letters

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have contributed equally to this work.Scalable fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for wide range of nanophotonics applications. We present here scalable fabrication of monolayer MoS 2 photodetectors on sapphire substrates through an efficient process, which includes growing large scale monolayer MoS 2 via chemical vapor deposition (CVD), and multi-step optical lithography for device patterning and high quality metal electrodes fabrication. In every measured device, we observed the following universal features: (i) negligible dark current (I dark 10f A); (ii) sharp peaks in photocurrent at ∼1.9eV and ∼2.1eV attributable to the optical transitions due to band edge excitons; (iii) a rapid onset of photocurrent above ∼2.5eV peaked at ∼2.9eV due to an excitonic absorption originating from the van Hove singularity of MoS 2 . We observe low ( 300%) device-to-device variation of photoresponsivity. Furthermore, we observe very fast rise time ∼0.5 ms, which is three orders of magnitude faster than other reported CVD grown 1L-MoS 2 based photodetectors. The combination of scalable device fabrication, ultra-high sensitivity and high speed offer a great potential for applications in photonics.Atomically thin monolayer two-dimensional (2D) transition-metal dichalcogenides (TMDs) are attractive materials for next-generation nanoscale optoelectronic applications and have gained tremendous interest in wide range of fields.1-4 TMDs demonstrate several extraordinary properties that make TMDs very attractive for optical, electrical and opto-electronic applications. First, 2D confinement, direct band-gap nature 5 , large surfaceto-volume ratio 6 , and weak screening of charge carriers enhance the light-matter interactions 5,7-10 in these materials that lead to extraordinarily high absorption. Second, strong light-matter interaction creates electron-hole (e-h) pairs and forms two-body bound states, known as excitons (a hydrogenic entity made of an e-h pair).

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High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors

Cited by 95 publications

References 41 publications

Controlled Layer-by-Layer Etching of MoS₂

Controlled Layer-by-Layer Etching of MoS₂

Interlayer interactions in anisotropic atomically thin rhenium diselenide

Large array fabrication of high performance monolayer MoS2 photodetectors

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High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors

Cited by 95 publications

References 41 publications

Controlled Layer-by-Layer Etching of MoS2

Controlled Layer-by-Layer Etching of MoS2

Interlayer interactions in anisotropic atomically thin rhenium diselenide

Large array fabrication of high performance monolayer MoS2 photodetectors

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Product

Resources

About

Controlled Layer-by-Layer Etching of MoS₂

Controlled Layer-by-Layer Etching of MoS₂