High‐Performance Ferroelectric Polymer Side‐Gated CdS Nanowire Ultraviolet Photodetectors

Abstract

An efficient ferroelectric‐enhanced side‐gated single CdS nanowire (NW) ultraviolet (UV) photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from polarization of ferroelectric polymer, the depletion of the intrinsic carriers in the CdS NW channel is achieved, which significantly reduces the dark current and increases the sensitivity of the UV photodetector even after the gate voltage is removed. Meanwhile, the low frequency noise current power of the device reaches as low as 4.6 × 10−28 A2 at a source‐drain voltage Vds = 1 V. The single CdS NW UV photodetector exhibits high photoconductive gain of 8.6 × 105, responsivity of 2.6 × 105 A W−1, and specific detectivity (D*) of 2.3 × 1016 Jones at a low power density of 0.01 mW cm−2 for λ = 375 nm. In addition, the spatially resolved scanning photocurrent mapping across the device shows strong photocurrent signals near the metal contacts. This is promising for the design of a controllable, high‐performance, and low power consumption ultraviolet photodetector.

The way to high-performance single nanowire photodetectors: problems and prospects

“…However the demand for NW growth technology is high. Recently InP and CdS NW photodetectors based on ultrahigh ferroelectric field were fabricated without complicated process [11,12]. Due to the full carrier depletion induced by the strong LEF from ferroelectric polarization of P(VDF-TrFE), these photodetectors exhibited ultrahigh detectivity.…”

1D/2D material-based photodetectors driven by ferroelectrics

“…Recently, ferroelectric FETs have been used for improving the performance of 1D/2D material-based photodetectors. For example, the researchers [10][11][12][13] from Shanghai Institute of Technical Physics, Chinese Academy of Sciences, have successfully combined several ferroelectric materials with 1D/2D materials to form field effect transistor-based photodetectors. Among these photodetectors, the poly(vinylidene fluoride-trifluoroethylene) (PVDF) was employed as the gate dielectric materials because of its excel-*Corresponding author (email: luolb@hfut.edu.cn) lent ferroelectricity and light transmission properties.…”

“…Among these photodetectors, the poly(vinylidene fluoride-trifluoroethylene) (PVDF) was employed as the gate dielectric materials because of its excel-*Corresponding author (email: luolb@hfut.edu.cn) lent ferroelectricity and light transmission properties. The stable remnant polarization of PVDF after polarization, can provide an ultrahigh local electrostatic field (≈10 9 V/m) onto the semiconducting channel which is much stronger than that produced by additional gate bias in FETs [10][11][12][13]. With the positive or negative direction of remnant polarization electrostatic field in PVDF, the 1D/2D materials channel can be maintained in fully depleted or accumulated state.…”

“…In addition to photodetectors made of 2D materials, the deposition of ferroelectric materials is beneficial for improving the device performance of 1D semiconductor nanostructures as well [10,11]. For instance, Hu et al assemble highly sensitive side-gated phototransistors.…”

Two-Dimensional Modeling of Silicon Nanowires Radial Core-Shell Solar Cells

“…Due to limited dimension and large surface-to-volume ratio, nanowires devices are more likely to exhibit unique properties especially for high performance photoelectric devices [4,5]. The performance is mostly affected by several issues such as lattice quality and electrode contact [6,7]. Among that, silicon nanowires (SiNWs) core-shell solar cells with a p-n junction were reported as promising solutions for energy efficient conversion.…”