High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Nela, Luca; Erine, Catherine; Ma, Jun; Yildirim, Halil Kerim; Erp, Remco van; Peng, Xiang; Cheng, Kai; Matioli, Elison

doi:10.23919/ispsd50666.2021.9452238

Cited by 7 publications

(2 citation statements)

References 13 publications

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“…Recently, novel HEMT designs such as multi-channel GaN HEMTs are showing great potential for achieving high breakdown voltagea (>1000 V) with a low sheet resistance (<150 Ω/ ) [16,17]. Also, novel gate designs such as p-GaN-gated HEMTs have shown excellent performance in reducing gate leakage currents to less than 1 µA/mm and increasing breakdown voltages to >1000 V [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)

Mukhopadhyay,

Liu,

Chen

et al. 2023

Crystals

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In this article, a high-composition (>35%) thick-barrier (>30 nm) AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/□) is reported. The optimization of growth conditions, such as reduced deposition rate, and the thickness optimization of different epitaxial layers allowed us to deposit a crack-free high-composition and thick AlGaN barrier layer HEMT structure. A significantly high two-dimensional electron gas (2DEG) density of 1.46 × 1013 cm−2 with a room-temperature mobility of 1710 cm2/V·s was obtained via Hall measurement using the Van der Pauw method. These state-of-the-art results show great potential for high-power Ga-polar HEMT design on sapphire substrates.

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Section: Introductionmentioning

confidence: 99%

Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)

Mukhopadhyay,

Liu,

Chen

et al. 2023

Crystals

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“…As demonstrated in Fig. 1(b), the gate width modulation technique is also an effective approach to mitigate the electric field peak at the edge of the gate electrode [11], [12]. The above techniques are employed to ease the electric field near the electrodes.…”

Section: Introductionmentioning

confidence: 99%

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

Liu

Zhang

Yao

et al. 2022

IEEE J. Electron Devices Soc.

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The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is proposed to reshape the charge distribution between the gate and drain electrodes. By applying the Gaussian box method, an effective designing guidance for the structure optimization of the AlGaN/GaN HEMT with adaptive-width drift region pillars (AWD-HEMT) is obtained. The fabricated AWD-HEMT demonstrated a significant improvement in breakdown performance. The Baliga's figure of merit (BFOM) of AWD-HEMT improved 65.3% compared with the conventional HEMT, without introducing complicated processes. In addition, the mechanism of the AWD-HEMT is explored by numerical methods. The simulations indicate that a more uniform electric field distribution at AlGaN/GaN interfaces could be obtained, and the increased varying rate of the adaptive-width drift region (AWD) pillars results in a more obvious electric field modulation effect.

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A perspective on multi-channel technology for the next-generation of GaN power devices

Nela

Xiao

Zhang

et al. 2022

Applied Physics Letters

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The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology has rapidly developed and is expected to gain a significant market share in an increasing number of applications in the coming years. However, despite the great progress, the performance of current GaN devices is still far from what the GaN material could potentially offer, and a significant reduction of the device on-resistance for a certain blocking voltage is needed. Conventional GaN high-electron-mobility-transistors are based on a single two-dimensional electron gas (2DEG) channel, whose trade-off between electron mobility and carrier density limits the minimum achievable sheet resistance. To overcome such limitations, GaN power devices including multiple, vertically stacked 2DEG channels have recently been proposed, showing much-reduced resistances and excellent voltage blocking capabilities for a wide range of voltage classes from 1 to 10 kV. Such devices resulted in unprecedented high-power figures of merit and exceeded the SiC material limit, unveiling the full potential of lateral GaN power devices. This Letter reviews the recent progress of GaN multi-channel power devices and explores the promising perspective of the multi-channel platform for future power devices.

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High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Cited by 7 publications

References 13 publications

Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)

Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

A perspective on multi-channel technology for the next-generation of GaN power devices

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