High-Performance Dual Gate Amorphous InGaZnO Thin Film Transistor With Top Gate to Drain Offset

Priyadarshi, Sunaina; Billah, Mohammad Masum; Kim, Hyunho; Rabbi, Md. Hasnat; Urmi, Sadia Sayed; Lee, Suhui; Jang, Jin

doi:10.1109/led.2021.3128940

Cited by 9 publications

(1 citation statement)

References 18 publications

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“…Insufficient carrier mobility is caused by the high interface trap density and defect centers in the channel and dielectric, resulting in a reduction in current driving capabilities and threshold voltage instability [5][6][7]. Many structural optimizations such as self-aligned top gate structure [8], double gate structure [9,10], vertical structure, and multigate structure are implemented to improve the electrical performance of the device. Nevertheless, the process steps required to fabricate the above structures are complex and not very cost-effective.…”

Section: Introductionmentioning

confidence: 99%

High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H₂ plasma and neutral oxygen beam irradiation treatment

Wu¹,

Mohanty²,

Huang³

et al. 2023

Nanotechnology

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In this work, staggered bottom-gate structure amorphous In-Ga-Zn-O (a-IGZO) TFTs with high-k ZrO2 gate dielectric were fabricated using low-cost atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) with in-situ hydrogenation to modulate the carrier concentration and improve interface quality. Subsequently, an oxygen-neutral beam irradiation (neutral beam oxidation: NBO) is applied, demonstrating that a suitable NBO treatment could successfully enhance electrical characteristics by reducing native defect states and minimizing the trap density in the back channel. A reverse retrograde channel (RRGC) with ultra-high/low carrier concentration is also formed to prevent undesired off-state leakage current and achieve a very low subthreshold swing. The resulting a-IGZO TFTs exhibit excellent electrical characteristics, including a low subthreshold swing (SS) of 72 mV/dec and high field-effect mobility of 35 cm2/Vs, due to conduction path passivation and stronger carrier confinement in the RRGC. The UV-Vis spectroscopy shows optical transmittance above 90 % in the visible range of the electromagnetic spectrum. The study confirms the H2 plasma with NBO-treated a-IGZO/ZrO2 TFT is a promising candidate for transparent electronic device applications.

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Section: Introductionmentioning

confidence: 99%

High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H₂ plasma and neutral oxygen beam irradiation treatment

Wu¹,

Mohanty²,

Huang³

et al. 2023

Nanotechnology

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Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

Wang

et al. 2023

Rare Met.

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Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer

Choi,

Kim,

Kim

et al. 2024

Sci Rep

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In this paper, high-performance indium gallium oxide (IGO) thin-film transistor (TFT) with a double-gate (DG) structure was developed using an atomic layer deposition route. The device consisting of 10-nm-thick IGO channel and 2/48-nm-thick SiO2/HfO2 dielectric was designed to be suitable for a display backplane in augmented and virtual reality applications. The fabricated DG TFTs exhibit outstanding device performances with field-effect mobility (μFE) of 65.1 ± 2.3 cm2V−1 s−1, subthreshold swing of 65 ± 1 mVdec−1, and threshold voltage (VTH) of 0.42 ± 0.05 V. Both the (μFE) and SS are considerably improved by more than two-fold in the DG IGO TFTs compared to single-gate (SG) IGO TFTs. Important finding was that the DG mode of IGO TFTs exhibits the nearly temperature independent μFE variations in contrast to the SG mode which suffers from the severe remote Coulomb scattering. The rationale for this disparity is discussed in detail based on the potential distribution along the vertical direction using technology computer-aided design simulation. Furthermore, the DG IGO TFTs exhibit a greatly improved reliability with negligible VTH shift of − 0.22 V under a harsh negative bias thermal and illumination stress condition with an electric field of − 2 MVcm−1 and blue light illumination at 80 °C for 3600 s. It could be attributed to the increased electrostatic potential that results in fast re-trapping of the electrons generated by the light-induced ionization of deep level oxygen vacancy defects.

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High-Performance Dual Gate Amorphous InGaZnO Thin Film Transistor With Top Gate to Drain Offset

Cited by 9 publications

References 18 publications

High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H₂ plasma and neutral oxygen beam irradiation treatment

High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H₂ plasma and neutral oxygen beam irradiation treatment

Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer

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High-Performance Dual Gate Amorphous InGaZnO Thin Film Transistor With Top Gate to Drain Offset

Cited by 9 publications

References 18 publications

High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H2 plasma and neutral oxygen beam irradiation treatment

High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H2 plasma and neutral oxygen beam irradiation treatment

Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer

Contact Info

Product

Resources

About

High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H₂ plasma and neutral oxygen beam irradiation treatment

High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H₂ plasma and neutral oxygen beam irradiation treatment