High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

Mishima, Y.; Yoskino, K.; Takeuchi, F.; Ohgata, K.; Takei, M.; Sasaki, Nobuo

doi:10.1109/55.902841

Cited by 20 publications

(8 citation statements)

References 4 publications

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“…It is clear that FE of PMELA TFTs is far superior to the conventional poly-Si TFTs. 3) The variations (3) of V T ranged from 0.2 to 0.4 V, which are about 1/3 to 1/2 of those of conventional poly-Si TFTs. V T of n-channel TFTs can readily be adjusted by varying the channel implantation dosage.…”

Section: Tft Performancementioning

confidence: 92%

“…Figure 6 shows pd as a function of L. Data taken from previous publications [3][4][5]22) are also plotted for comparison.…”

Section: Circuit Performancementioning

confidence: 99%

“…Thus, the field-effect mobilities of TFTs formed on such a poly-Si film are still as low as 150 -200 cm 2 V À1 s À1 , i.e., about one-third of that of crystal Si counterparts, and insufficient for monolithic integration of high-speed digital and/or analog circuits on glass substrates. Even for 0.5 mm devices, the propagation delay time of a CMOS inverter is as long as 200 ps at a supply voltage of 3.3 V. 3) In recent years, it has become apparent that better performances are expected from using larger grains. 4,5) Several advanced ELA methods [6][7][8][9] have been developed for growing extremely large grains at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

Kawachi¹,

Nakazaki²,

Ogawa³

et al. 2007

jjap

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Polycrystalline silicon (poly-Si) complementary metal–oxide–semiconductor (CMOS) circuits have been fabricated by using an advanced excimer-laser annealing method and a plasma-oxidation method. The 1-µm-long thin-film transistors (TFTs) were fabricated on arrays of laterally grown long and narrow grains, so that the majority of carriers were free from scattering at grain boundaries during propagation through the channel. The propagation delay time measured by a 21-stage ring oscillator was 175 ps and a power-delay product of 9×10-13 J/gate was obtained at a supply voltage of 3.3 V. The obtained propagation delay time was almost the same as those of bulk Si devices having the same gate length. Furthermore, we expect that 1-µm-long CMOS TFT circuits on glass will have a performance superior to that of 1-µm-long bulk Si devices when the short channel effect and threshold voltage fluctuation are controlled well.

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Section: Tft Performancementioning

confidence: 92%

“…Figure 6 shows pd as a function of L. Data taken from previous publications [3][4][5]22) are also plotted for comparison.…”

Section: Circuit Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

Kawachi¹,

Nakazaki²,

Ogawa³

et al. 2007

jjap

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“…Electrical characterization shows the NW -TFT oscillator exhibits a self -sustained stable output voltage oscillation, with a maximum oscillation frequency greater than 10 MHz and stage delay (the time required to transmit the signal through each transistor) on the order of 10 ns (Figures 8c and 8d). 52 Although the ac per form ance of current NW -TFT circuits is still inferior to that of the best reported poly -Si TFT circuits (stage delay, 100-500 ps), 29,53 we believe that further development in NW -TFT technology (by optimizing the nanowire synthesis, assembly, and device fabrication proc ess or using alternative ma te rials) can significantly improve the per form ance of NW -TFT circuits. 52 Although the ac per form ance of current NW -TFT circuits is still inferior to that of the best reported poly -Si TFT circuits (stage delay, 100-500 ps), 29,53 we believe that further development in NW -TFT technology (by optimizing the nanowire synthesis, assembly, and device fabrication proc ess or using alternative ma te rials) can significantly improve the per form ance of NW -TFT circuits.…”

Section: High -Speed Integrated Nw -Tft Circuitsmentioning

confidence: 99%

Assembled Semiconductor Nanowire Thin Films for High-Performance Flexible Macroelectronics

Duan¹

2007

MRS Bull.

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A new concept of macroelectronics using assembled semiconductor nanowire thin films holds the promise of significant performance improvement. In this new concept, a thin film of oriented semiconductor nanowires is used to produce thin-film transistors (TFTs) with conducting channels formed by multiple parallel single-crystal nanowire paths. There fore, charges travel from source to drain within single crystals, ensuring high carrier mobility. Recent studies have shown that high-performance silicon nanowire TFTs and high-frequency circuits can be readily produced on a variety of substrates including glass and plastics using a solution assembly process. The device performance of these nanowire TFTs not only greatly surpasses that of solution-processed organic TFTs, but is also significantly better than that of conventional amorphous or polycrystalline silicon TFTs, approaching single-crystal silicon-based devices. Furthermore, with a similar frame-work, Group III-V or II-VI nanowire or nanoribbon materials of high intrinsic carrier mobility or optical functionality can be assembled into thin films on flexible substrates to enable new multifunctional electronics/optoelectronics that are not possible with traditional macroelectronics. This can have an impact on a broad range of existing applications, from flat-panel displays to image sensor arrays, and enable a new generation of flexible, wearable, or disposable electronics for computing, storage, and wireless communication.

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“…100-500 ps;Mishima et al 2001, Hara et al 2004, we believe that further development in NW-TFT technology (by optimizing the NW synthesis, assembly, and device fabrication process or using alternative materials) can significantly improve the performance of NW-TFT circuit. For example, Sun and colleagues have demonstrated Gigahertz operation in transistors fabricated from microstructured GaAs wires on plastics(Sun et al 2006).…”

mentioning

confidence: 99%

Nanowire Thin Films for Flexible Macroelectronics

Duan¹

2010

Encyclopedia of Materials: Science and Technology

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High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

Cited by 20 publications

References 4 publications

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

Assembled Semiconductor Nanowire Thin Films for High-Performance Flexible Macroelectronics

Nanowire Thin Films for Flexible Macroelectronics

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