2006
DOI: 10.1109/lpt.2006.884725
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High-Performance Chirped Electrode Design for Cat's Eye Retro-Reflector Modulators

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Cited by 25 publications
(8 citation statements)
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“…Since the coating and the EOM are very thin, the 532-nm beam can still transit along the path of the 1064-nm fundamental beam. Nanoparticle film modulator or pixelated multiple quantumwell (MQW) modulator can be employed here [24,25], as they are thin enough. Different from the previous work, here we place the EOM at the pupil of RR1 so that the area of the EOM can be small.…”
Section: (B)mentioning
confidence: 99%
“…Since the coating and the EOM are very thin, the 532-nm beam can still transit along the path of the 1064-nm fundamental beam. Nanoparticle film modulator or pixelated multiple quantumwell (MQW) modulator can be employed here [24,25], as they are thin enough. Different from the previous work, here we place the EOM at the pupil of RR1 so that the area of the EOM can be small.…”
Section: (B)mentioning
confidence: 99%
“…Nevertheless, even narrow-band optical filters are used, the modulator still has to operate at tens of GHz to ensure that the signal frequency lies out of the filter's passband. As high-speed modulation is supported by splitting the modulator's surface into small pixels, the driving power as well as the temperature will increase to a prohibitive level [17]. The demands for a practical and economic echo-interference-free RBCom systems motivate this work.…”
Section: Retroreflectormentioning
confidence: 99%
“…To form the p-electrode, the inner mesa was etched up to the top surface of p-doped GaAs contact layer to form a trench of width 50µm, while to form the n-electrode, the outer mesa was etched up to the top surface of n-doped GaAs contact layer so that the device consists of two pixels having an area 2mm ‰ 0.5mm. Fish-bone grid n-electrode was formed on top of n-GaAs contact layer to achieve uniform frequency response over a large area [2,24]. To operate both the absorptive cavities simultaneously, the edges of the finger lines at the outer periphery is connected to the bottom n-electrode by using SiN x as the isolating layer, as shown in Fig.…”
Section: Design Growth and Fabricationmentioning
confidence: 99%