High‐performance charge plasma based normally OFF GaN MOSFET

Abstract

A high-performance enhancement-mode charge plasma based gallium nitride (CP-GaN) MOSFET is stimulated. Here, metals of same work functions are used to induce n-type charge plasma in an undoped GaN film to realise source and drain regions of a GaN MOSFET. The proposed device is not hetrostructure like the conventional GaN/ AlGaN devices and is hence free from hetero-epitaxial defects and inverse piezoelectric effects, and can have reduced leakage and can be more reliable. An extensive simulation study has revealed that the proposed CP-GaN device exhibits a threshold voltage of 1.4 V, large I ON /I OFF ratio of 10 8 and transconductance (g m) of 308 mS/mm.

Hybrid AlGaN/GaN high‐electron mobility transistor: design and simulation

“…3b, an alignment of the Fermi levels of the metal (E FM ) and the semiconductor (E FS ) will occur to establish a thermal equilibrium. When the work-function of a metal (Φ M ) is smaller than the work-function of a semiconductor (Φ Sc ), electrons will get injected from the metal to semiconductor to shift its Fermilevel and results in degenerating the semiconductor [8][9][10][11][12][17][18][19][20][21][22] and induction of n-type CP. The induced n type plasma induced is given by [9,17,18]…”

“…Further, the realisation of two-dimensional electron gas (2DEG) with high-sheet charge concentration (>10 13 cm −2 ) and high-electron mobility (∼2000 cm 2 /V-s) is a unique property of GaN/AlGaN hetrostructure devices [3,4]. These unique properties of GaN/AlGaN hetrostructures have been explored in realising a high-electron mobility transistor (HEMT) [1][2][3][4][5][6][7][8][9].…”

“…In the conventional as well in the proposed devices, 2DEG gets created at the GaN/AlGaN interface due to polarisation charge. In the proposed structure, low-work function metal electrodes are used on source drain side to induce n + CPEG in the undoped AlGaN layer [8][9][10][11][12][13].…”

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

“…[70,71,73,102,103] III-V materials GaN n-type SB-MOSFET (exp.) [51] GaAs Tunnel diode [96], GaN n-MOSFET [52], InAs TFET [118] GaAs EH Bilayer (exp.) [119], InAs EH bilayer LED [57,82] Polycrystalline materials CP based poly-Si TFT [120], IGZO TFT (exp.)…”

“…GaN based n-channel SB-MOSFET has also been reported before [51]. Other possible forms of ED such as work function induced doping has also been utilized before to propose an n-type GaN MOSFET using TCAD simulations [52]. Even biasinduced p-type ED has been reported for a wide band gap material such as ZnO [53] though the source of holes is not clear from the report.…”