High-performance CdS:P nanoribbon field-effect transistors constructed with high-κ dielectric and top-gate geometry

Abstract

High-performance field-effect transistors (FETs) based on single phosphorus-doped n-type CdS nanoribbon with high-κ HfO2 dielectric and top-gate geometry were constructed. In contrast to the nano-FETs that were fabricated on SiO2/Si substrate with back-gate device configuration, the top-gate FETs exhibit a substantial improvement in performances, i.e., work voltage was reduced to a small value of within ±5 V, the subthreshold swing was reduced to 200 mV/dec and the Ion/Ioff ratio was increased by about six orders of magnitude. The top-gate CdS:P nano-FET shows high sensitivity upon light irradiation, revealing that the top-gate FETs are promising candidates for nanoelectronic and optoelectronic applications.

One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications

“…Fig. 7 shows top-gate nano-MOSFETs built with CdS:P NRs [153]. Both back-gate and top-gate nano-FETs are constructed for comparison.…”

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

“…Many high efficiency device applications were achieved based on building blocks of semiconductor nanostructures, such as photodetectors, solar cells, laser diodes, field-effect transistors, etc. [6][7][8][9]. On the other hand, wide band gap II-VI semiconductors have been extensively studied for many years according to their great potentials for optoelectronic applications: blue-green laser diodes based on ZnSe [10], high-efficiency solar cells based on CdTe thin films [11], high performance radiation detecting devices based on CdZnTe [12], etc.…”

Synthesis and optoelectronic properties of p-type nitrogen doped ZnSe nanobelts

“…Large contact resistance will result in the device performance degradation, which is needed to be eliminated for realizing high-performance devices. Besides the use of appropriate metal electrode, doping has been demonstrated to be an efficient way, which is also a feasible method to tune their optoelectronic properties and further enhance their device performances [25,26]. So far, As and Bi doping have been utilized to enhance the p-type conductivity of the ZnSe nanowires, representing an important achievement in nanomaterials synthesis and offering the opportunities for future nanodevice applications [15,18].…”