High performance broadband photodetector based on MoS2/porous silicon heterojunction

Abstract

A high speed efficient broadband photodetector based on a vertical n-MoS2/p-porous silicon heterostructure has been demonstrated. Large area MoS2 on electrochemical etched porous silicon was grown by sulphurization of a sputtered MoO3 thin film. A maximum responsivity of 9 A/W (550–850 nm) with a very high detectivity of ∼1014 Jones is observed. Transient measurements show a fast response time of ∼9 μs and is competent to work at high frequencies (∼50 kHz). The enhanced photodetection performance of the heterojunction made on porous silicon over that made on planar silicon is explained in terms of higher interfacial barrier height, superior light trapping property, and larger junction area in the MoS2/porous silicon junction.

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

“…92 Das and coworkers boosted the detection performance of a MoS 2 /porous Si heterojunction-based photodetector by virtue of its large junction area, excellent light trapping properties, and high interfacial barrier height. 93 The photodetector exhibited an ultrahigh detectivity of approximately 10 14 Jones, small rise/fall times of 9/7 μs, and a maximum responsivity of 9 A W −1 in the range from 550 to 850 nm. In addition, a vertically standing layered MoSe 2 /p-Si heterojunction-based photodetector was also developed using graphene as the top electrode material.…”

“…Moreover, Wang et al further fabricated vertically standing few‐layer MoS 2 /p‐Si heterojunctions with a fast response time of approximately 16 ns at zero bias . Das and coworkers boosted the detection performance of a MoS 2 /porous Si heterojunction‐based photodetector by virtue of its large junction area, excellent light trapping properties, and high interfacial barrier height . The photodetector exhibited an ultrahigh detectivity of approximately 10 14 Jones, small rise/fall times of 9/7 μs, and a maximum responsivity of 9 A W −1 in the range from 550 to 850 nm.…”

Influence of MoS2‐Silicon Interface States on Spectral Photoresponse Characteristics

“…Monolayer MoS 2 has been deposited by the chemical vapor deposition (CVD) method on p‐type Si to develop heterojunction solar cells . Furthermore, sulfurization of metal and metal oxide films deposited on the Si substrate has been performed to synthesize MoS 2 layers for heterostructure device applications . It has also been demonstrated that vertically standing MoS 2 ‐layered structure can be deposited directly on the Si substrate to develop optoelectronic devices .…”

“…[28] Furthermore, sulfurization of metal and metal oxide films deposited on the Si substrate has been performed to synthesize MoS 2 layers for heterostructure device applications. [29,30] It has also been demonstrated that vertically standing MoS 2 -layered structure can be deposited directly on the Si substrate to develop optoelectronic devices. [21] In this prospect, the interface between the MoS 2 and p-type Si is the key aspect to understand the photoresponsive behavior in the heterojunction.…”

Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe2/Pyramid Si Heterojunction

“…[4,5] Among these semiconductors, Si is most widely employed, especially in complementary metal oxide semiconductor (CMOS) devices and advanced light detection systems. [6][7][8] In spite of the huge progress, it is undeniable that Si-based NIR photodetectors often suffer from relatively narrow wavelength photoresponse due to its cutoff around 1.1 µm. To address this issue, various Ge, PbS, and HgCdTe semiconductors with bandgap much smaller than that of silicon have been introduced into silicon-based NIR photodetectors.…”