High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer

Liu, Xianzhe; Ning, Honglong; Chen, Jianqiu; Cai, Wei; Hu, Shiben; Tao, Ruiqiang; Zeng, Yong; Zheng, Zeke; Yao, Rihui; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao

doi:10.1063/1.4944639

Cited by 28 publications

(21 citation statements)

References 20 publications

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“…

C_{i}

is the gate capacitance per unit area. The trap density (

D_{t}

) of the bulk states or the interface states between STO films and the dielectric interface can be calculated using the following Equation (6) [21]:

D_{t} = [\frac{S S l o g (e)}{\frac{k_{B} T}{q}} - 1] \frac{C_{i}}{q},

where

k_{B}

is Boltzmann constant, T is absolute temperature,

C_{i}

is the capacitance per unit area,

q

is a unit charge, and

S S

is sub-threshold swing. As shown in Table 2, STO TFTs do not exhibit switching behavior at annealing temperature of 350 °C.…”

Section: Resultsmentioning

confidence: 99%

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

et al. 2017

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The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO) films have been investigated. Since a state of tensile stress is available in as-deposited films, the value of stress can be exponentially enhanced when the annealing temperature is increased. The tensile stress is able to not only suppress the crystallization and widen the optical band gap of STO films, but also reduce defects of STO films. In this report, the good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 °C. This includes a value of saturation mobility that can be reached at 6.7 cm2/Vs, a ratio of Ion/Ioff as 7.34 × 107, a steep sub-threshold swing at 0.625 V/decade, and a low trap density of 7.96 × 1011 eV−1·cm−2, respectively.

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“…

C_{i}

is the gate capacitance per unit area. The trap density (

D_{t}

) of the bulk states or the interface states between STO films and the dielectric interface can be calculated using the following Equation (6) [21]:

D_{t} = [\frac{S S l o g (e)}{\frac{k_{B} T}{q}} - 1] \frac{C_{i}}{q},

where

k_{B}

is Boltzmann constant, T is absolute temperature,

C_{i}

is the capacitance per unit area,

q

is a unit charge, and

S S

is sub-threshold swing. As shown in Table 2, STO TFTs do not exhibit switching behavior at annealing temperature of 350 °C.…”

Section: Resultsmentioning

confidence: 99%

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

et al. 2017

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“…Compared with indium gallium zinc oxide thin film, a‐STO has the advantages of controllable composition, no toxicity, low raw material cost, etc. so a‐STO has a broad application prospect …”

Section: Introductionmentioning

confidence: 99%

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

et al. 2019

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In this paper, the effect of deep ultraviolet (UV) laser on physical and electrical properties of amorphous Silicon-doped tin oxide (amorphous Si-Sn-O, a-STO) thin films were studied. Surface morphology, thickness, crystallinity, and optical band gap of a-STO thin films treated by laser were investigated. Results showed that the decrease of thickness and surface roughness of a-STO thin films after deep UV laser treatment, and the films maintained an amorphous structure, which implied that the quality of a-STO thin films were improved.The peak position of oxygen vacancy binding energy became lower; this is caused by an increase in oxygen vacancies resulting in a decrease in coordination number. And the oxygen vacancy content of the a-STO thin films was increased after deep UV laser treatment. In addition, the optical band gap of a-STO films was broaden after the deep UV laser treatment. It exploits a new application of deep UV laser in oxide semiconductor.KEYWORDS amorphous STO thin film, deep ultraviolet laser, optical band gap, oxygen vacancy

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“…Tin oxide (SnO 2 ) is regarded as a promising candidate for the channel layer of TFT because of its cheap and nontoxicity . However, poor electrical properties are obtained in SnO 2 TFTs due to excess carrier concentration and crystallization.…”

Section: Introductionmentioning

confidence: 99%

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

et al. 2019

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The structural, optical, and electrical properties of Si‐doped SnO2 (STO) films were investigated in terms of their potential applications for flexible electronic devices. All STO films were amorphous with an optical transmittance of ~90%. The optical band gap was widened as the Si content increased. The Hall mobility and carrier density were improved in the SnO2 with 1 wt% Si film, which was attributed to the formation of donor states. Si (1 wt%) doped SnO2 thin‐film transistor exhibited a good device performance and good stability with a saturation mobility of 6.38 cm2/Vs, a large Ion/Ioff of 1.44 × 107, and a SS value of 0.77 V/decade. The device mobility of a‐STO TFTs at different bending radius maintained still at a high level. These results suggest that a‐STO thin films are promising for fabricating flexible TFTs.

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High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer

Cited by 28 publications

References 20 publications

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

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