High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

Wang, Wenbo; Mayrhofer, P. M.; He, Xin; Gillinger, M.; Yang, Zhi; Wang, Xiaozhi; Bittner, A.; Schmid, Ulrich; Luo, Jikui

doi:10.1063/1.4896853

Cited by 93 publications

(55 citation statements)

References 29 publications

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“…[8][9][10][11][12][13][14] Enhancements of more than 400% have been measured for the longitudinal and transversal response to stress, d 33 and d 31 , respectively. 15 The underlying reason for this profound change in properties is understood to be the presence of a metastable hexagonal phase in ScN.…”

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confidence: 99%

Stress controlled pulsed direct current co-sputtered Al_1−xSc_xN as piezoelectric phase for micromechanical sensor applications

et al. 2015

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confidence: 99%

Stress controlled pulsed direct current co-sputtered Al_1−xSc_xN as piezoelectric phase for micromechanical sensor applications

et al. 2015

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“…The increase of K 2 value depends on the normalized thickness of the active layer, but all more than 300% larger compared to that of AlN SAW as detailed in our previous work. 31 The great increase of the coupling coefficient is believed to be mainly caused by the significantly improved piezoelectric coefficient from elastic softening. This will significantly improve device performance, beneficiary for sensor, actuator and microfluidic applications.…”

Section: Resultsmentioning

confidence: 99%

“…31 For microfluidic tests, a signal generator (Marconi 2024) and a power amplifier (Amplifier research, 75A250) were utilized to generate and amplify the RF signals before applied to the SAW device, which was put on a bulk Al holder for easy heat dissipation. The movement of fluidic streaming was captured using a video camera.…”

Section: Methodsmentioning

confidence: 99%

“…31,33,34 Post annealing of the films were performed at 800 °C with a duration of 10 min, under nitrogen protection with a N2 gas flow rate of 1 L/min.…”

Section: Methodsmentioning

confidence: 99%

“…15 It is one of the most important piezoelectric materials for many applications including energy harvesting, 16 In our previous work, K 2 value for the Rayleigh SAW mode can be enhanced more than 300% when applying a 27% Sc element in AlScN. 30,31 The significant improvement of K 2 value can be expected to lead to a higher efficiency for sensing, actuation and microfluidic applications, which will provide a promising opportunity for making better integrated lab-on-a-chips.…”

Section: Instructionmentioning

confidence: 99%

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AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

Wang

Chen

et al. 2016

J. Micromech. Microeng.

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Acousto‐Optic Modulation in Silicon Waveguides Based on Piezoelectric Aluminum Scandium Nitride Film

Huang

Shi

et al. 2022

Advanced Optical Materials

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In recent years, piezoelectric materials, such as AlN, lithium niobate (LN) and GaAs, are frequently applied to acoustooptic (AO) coupling interactions with great potentials. [16][17][18][19][20][21][22][23][24] With a travelling SAW actuated by the interdigital transducer (IDT), the optical waves in waveguides are scattered by the travelling refractive index gratings and frequencyshifted through Doppler effect. [25] The AO coupling in piezoelectric materials offers a promising way to implement on-chip AO modulation, microwave photonic filtering, acousto-optic frequency shift, and nonreciprocal light propagation. [16,17,26,27] Different from the intrinsic optomechanical interactions in waveguides, [28][29][30][31][32][33][34] it is unnecessary to design suspended waveguides or optomechanical cavities for the AO interactions, which guarantees the stability and feasibility for on-chip applications. [16,35] Meanwhile, the electrically driven AO interactions exhibit higher AO scattering efficiency than the intrinsic optomechanical interactions, which can be adjusted in both optical domain and electrical domain. [36,37] Although LN (d 33 = 6 pC N -1 ) is a good candidate in AO interactions for its outstanding optical and piezoelectric properties, [38] it is not compatible with complementary metal-oxide-semiconductor (CMOS) technology to achieve large-scale fabrication. [20][21][22] As for AlN, it is generally deposited on silicon substrate through magnetic sputtering that is compatible with CMOS technology, but it poses a challenge to design waveguide structures in AlN layer because of the smaller refractive index than silicon substrate. [17,18] Therefore, suspended waveguide structures are indispensable for AlN on silicon substrate to carry out AO interactions. Surprisingly, a nonsuspended structure of AlN deposited on silicon-on-insulator (SOI) platform with a SiO 2 interlayer had realized AO modulation recently, where the optical wave is mostly confined in the nonpiezoelectric silicon layer instead of AlN layer. [39] In that structure, the SAW actuated by the IDT propagates from AlN layer across SiO 2 interlayer and finally modulates the optical waves in the silicon waveguides, where the SiO 2 interlayer greatly increases the SAW propagation loss and degrades the acoustic performances. [40] At last, with the same CMOS-compatible deposition as AlN and better piezoelectric properties than AlN, Aluminum scandium nitride (AlScN) has attracted extensive attention for its excellent piezoelectric properties in the micro-electromechanical system applications. In this work, AlScN is demonstrated to be a promising candidate for on-chip acousto-optic coupling interactions with outstanding piezoelectric properties as well. Based on piezoelectric Al 0.6 Sc 0.4 N film deposited on silicon-on-insulator platform, the proposed devices exhibit impressive acousto-optic coupling performances over a short interaction length of 210 µm with surface acoustic waves actuated by interdigital transducers. Meanwhile, the acousto-optic coupling...

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High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

Cited by 93 publications

References 29 publications

Stress controlled pulsed direct current co-sputtered Al_1−xSc_xN as piezoelectric phase for micromechanical sensor applications

Stress controlled pulsed direct current co-sputtered Al_1−xSc_xN as piezoelectric phase for micromechanical sensor applications

AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

Acousto‐Optic Modulation in Silicon Waveguides Based on Piezoelectric Aluminum Scandium Nitride Film

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High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

Cited by 93 publications

References 29 publications

Stress controlled pulsed direct current co-sputtered Al1−xScxN as piezoelectric phase for micromechanical sensor applications

Stress controlled pulsed direct current co-sputtered Al1−xScxN as piezoelectric phase for micromechanical sensor applications

AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

Acousto‐Optic Modulation in Silicon Waveguides Based on Piezoelectric Aluminum Scandium Nitride Film

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Stress controlled pulsed direct current co-sputtered Al_1−xSc_xN as piezoelectric phase for micromechanical sensor applications

Stress controlled pulsed direct current co-sputtered Al_1−xSc_xN as piezoelectric phase for micromechanical sensor applications