AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

Wang, W B; Fu, Yong Qing; Chen, J J; Xuan, Weipeng; Chen, J K; Wang, X Z; Mayrhofer, Paul H.; Duan, Pengfei; Bittner, A.; Schmid, U.; Luo, Jikui

doi:10.1088/0960-1317/26/7/075006

Cited by 34 publications

(14 citation statements)

References 50 publications

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“…Precision cell positioning has become a critical issue of research in the realm of precision medicine, as proper classification of cellular behaviour can only be done through investigating separate cell reactions. To move micro particles and cells remotely, dielectrophoretic [78], magnetic, optical, and acoustic [79] forces are utilized. Single-beam acoustic tweezers (SBAT) have gained a lot of attention among acoustic devices, and its viability was practically and theoretically established some years previously [3].…”

Section: Acoustic Biosensorsmentioning

confidence: 99%

Piezoelectric Thin Films and their Applications

Rizwan

2022

Materials Research Foundations

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Lead free piezoelectric thin films are very pivotal in technological applications. There has been a tremendous amount of research in the lead free piezoelectric thin films. KNN and ZnO piezoelectric thin films are very crucial in the miniaturization of piezoelectric devices. Characterization methods for piezoelectric thin films such as resonant spectrum method and pneumatic loading method are briefly deliberated here. Piezoelectric thin films provide several advantages in various applications such as highly sensitive sensors, large displacements and low voltage actuators. All applications of piezoelectric materials exhibit a high piezoelectric coefficient, insight into future outlook and integration for real-world applications is deliberated here.

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Section: Acoustic Biosensorsmentioning

confidence: 99%

Piezoelectric Thin Films and their Applications

Rizwan

2022

Materials Research Foundations

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“…[ 6,30 ] Thanks to the excellent acoustic wave guiding of AlScN‐on‐SiC (or simply AlScN/SiC) heterostructure, surface acoustic wave (SAW) delay lines fabricated on AlScN/SiC have been demonstrated, which exhibit high SAW velocities >12 000 m s −1 , much higher than counterpart AlScN SAW devices on Si substrate. [ 31 ] It has been reported that using AlScN/SiC as the device layer also improves the overall thermal performance of the MEMS and leads to higher RF power handling. [ 32,33 ] Although AlScN alloy thin films exhibit a good balance between high tolerable temperature and strong piezoelectricity, [ 18 ] AlScN/SiC thin film micromachined resonant transducers operating in high‐temperature environment have not been explored.…”

Section: Introductionmentioning

confidence: 99%

AlScN‐on‐SiC Thin Film Micromachined Resonant Transducers Operating in High‐Temperature Environment up to 600 °C

Sui

Wang

Lee

et al. 2022

Adv Funct Materials

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The experimental demonstration of aluminum scandium nitride (AlScN)‐on‐cubic silicon carbide (SiC) heterostructure thin film micromachined resonant transducers operating in a high‐temperature environment up to 600 °C is reported. Macroscopic and microscopic vibrations are investigated through a combination of ultrasensitive laser interferometry techniques and Raman spectroscopy. An average linear temperature coefficient of resonance frequency (TCf) of <1 ppm °C−1 within the temperature range from room temperature to 200 °C, and an average linear TCf of −16 ppm °C−1 between 200 and 600 °C, from the fundamental‐mode resonance of AlScN/SiC circular diaphragm resonator with a thickness of 1.9 µm and diameter of 250 µm, is obtained. Higher‐order modes exhibit much larger TCf, which make them strong candidates as high‐temperature‐tolerant temperature sensors or ultraviolet detectors. Raman spectroscopy indicates that the turning points of the peak positions of the longitudinal optical phonon modes of both 3C‐SiC and AlScN occur in almost the same temperature region where the turnover point of TCf is observed, suggesting that the microscopic vibrations in the crystal lattice and the macroscopic oscillation of the diaphragm are naturally mediated by the residual strain inside the materials at varying temperature.

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Section: Introductionmentioning

confidence: 99%

“…Currently, the research is mainly focused on the study of the physical mechanisms causing the improvement of the piezoelectric properties of this ternary alloy although few explorations of integration of such thin films into MEMS devices have been reported, such as surface acoustic wave devices, 14,15 bulk acoustic wave devices, 16 micromachined ultrasonic transducers and vibrational energy harvesting cantilevers. 17,18 However, while the synthesis and device integration of Sc x Al (1−x) N films on rigid substrates have been studied, the use of this ternary compound onto soft substrates has not been explored yet.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectricity and Biocompatibility of Flexible Sc_xAl_(1–x)N Thin Films for Compliant MEMS Transducers

Algieri

Todaro

Guido

et al. 2020

ACS Appl. Mater. Interfaces

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There is huge research activity in the development of flexible and biocompatible piezoelectric materials for next-generation compliant micro electro-mechanical systems (MEMS) transducers to be exploited in wearable devices and implants. This work reports for the first time on the development of flexible Sc x Al(1–x)N films deposited by sputtering technique onto polyimide substrates, assessing their piezoelectricity and biocompatibility. Flexible Sc x Al(1–x)N films have been analyzed in terms of morphological, structural, and piezoelectric properties. Sc x Al(1–x)N layer exhibits a good surface roughness of 4.40 nm and moderate piezoelectricity with an extracted effective piezoelectric coefficient (d 33 eff) value of 1.87 ± 0.06 pm/V, in good agreement with the diffraction pattern analysis results. Cell viability assay, performed to study the interaction of the Sc x Al(1–x)N films with human cell lines, shows that this material does not have significant effects on tested cells. Furthermore, the Sc x Al(1–x)N layer, integrated onto a flexible device and analyzed by bending/unbending measurements, shows a peak-to-peak open-circuit voltage (V OC) of 0.32 V and a short-circuit current (I SC) of 0.27 μA, with a generated power of 19.28 nW under optimal resistive load, thus demonstrating the potential of flexible Sc x Al(1–x)N films as active layers for next-generation wearable/implantable piezoelectrics.

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AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

Cited by 34 publications

References 50 publications

Piezoelectric Thin Films and their Applications

Piezoelectric Thin Films and their Applications

AlScN‐on‐SiC Thin Film Micromachined Resonant Transducers Operating in High‐Temperature Environment up to 600 °C

Piezoelectricity and Biocompatibility of Flexible Sc_xAl_(1–x)N Thin Films for Compliant MEMS Transducers

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AlScN thin film based surface acoustic wave devices with enhanced microfluidic performance

Cited by 34 publications

References 50 publications

Piezoelectric Thin Films and their Applications

Piezoelectric Thin Films and their Applications

AlScN‐on‐SiC Thin Film Micromachined Resonant Transducers Operating in High‐Temperature Environment up to 600 °C

Piezoelectricity and Biocompatibility of Flexible ScxAl(1–x)N Thin Films for Compliant MEMS Transducers

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Product

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Piezoelectricity and Biocompatibility of Flexible Sc_xAl_(1–x)N Thin Films for Compliant MEMS Transducers