High-performance all-solution-processed inverted quantum dot light-emitting diodes enabled by water treatment

Hu, Qianqing; Si, Junjie; Chen, Desui; Hao, Xiaoming; Xu, Rui; Du, Yin; Du, Zhuopeng; Gong, Xinquan; Zhao, Hong; Cai, Peiqing; Ai, Qi; Yao, Xin; Yan, Yu; Zhang, Zenan; Cai, Muzhi; Liu, Wei; Kang, Yongyin; Liu, Zugang

doi:10.1007/s12274-023-5635-9

Cited by 2 publications

(1 citation statement)

References 45 publications

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“…Nowadays, two conventional architectures are employed for QLED devices, the normal structure and the inverted structure. The normal QLED is structured as a substrate/anode/ hole injection layer (HIL)/hole transport layer (HTL)/QDs/electron transport layer (ETL)/cathode, while the inverted QLED comprises substrate/cathode/ETL/QDs/HTL/HIL/anode [23,24] .…”

Section: Introductionmentioning

confidence: 99%

Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

Li,

Ma,

Liu

et al. 2023

J. Semicond.

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The performance of inverted quantum-dot light-emitting diodes (QLEDs) based on solution-processed hole transport layers (HTLs) has been limited by the solvent-induced damage to the quantum dot (QD) layer during the spin-coating of the HTL. The lack of compatibility between the HTL's solvent and the QD layer results in an uneven surface, which negatively impacts the overall device performance. In this work, we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent. The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V, a high maximum luminance of 105 500 cd/m2, and a remarkable maximum external quantum efficiency of 13.34%. This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.

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Section: Introductionmentioning

confidence: 99%

Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

Li,

Ma,

Liu

et al. 2023

J. Semicond.

View full text Add to dashboard Cite

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Solution‐Processed Tandem Quantum‐Dot Light‐Emitting Diodes with Dual Charge Generation Interfaces: Achieving Over Threefold Efficiency Enhancement

Meng,

Shen,

Liu

et al. 2024

Adv Materials Inter

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Despite the commercialization of thermally evaporated tandem organic light‐emitting diodes (OLEDs), challenges remain for solution‐processed tandem quantum‐dot light‐emitting diodes (QLEDs), including low efficiency and solvent‐induced damage to functional layers. Therefore, there is an urgent need for the optimization of the interconnecting layer (ICL) design in order to fabricate high‐performance solution‐processed tandem QLEDs. Here, by introducing a phosphomolybdic acid (PMA) layer between poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and poly(9‐vinylcarbazole) (PVK), an novel ICL, PVK/PMA/PEDOT:PSS/ZnO is proposed, with dual charge generation interfaces (CGIs): PVK/PMA and PEDOT:PSS/ZnO. The PMA interlayer serves not only smoothing the morphology of PEDOT:PSS to improve charge transport, but also forming a PVK/PMA CGI to enhance charge generation. Based on the excellent electrical and optical properties of the dual‐CGI ICL, the solution‐processed inverted tandem red QLEDs achieve an increased external quantum efficiency (EQE) of over three times compared to single‐junction devices. This provides a novel approach for the high‐efficiency solution‐processed tandem QLEDs, paving the way for the practical application of QLEDs.

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High-performance all-solution-processed inverted quantum dot light-emitting diodes enabled by water treatment

Cited by 2 publications

References 45 publications

Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

Solution‐Processed Tandem Quantum‐Dot Light‐Emitting Diodes with Dual Charge Generation Interfaces: Achieving Over Threefold Efficiency Enhancement

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