Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

Abstract

The performance of inverted quantum-dot light-emitting diodes (QLEDs) based on solution-processed hole transport layers (HTLs) has been limited by the solvent-induced damage to the quantum dot (QD) layer during the spin-coating of the HTL. The lack of compatibility between the HTL's solvent and the QD layer results in an uneven surface, which negatively impacts the overall device performance. In this work, we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent. The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V, a high maximum luminance of 105 500 cd/m2, and a remarkable maximum external quantum efficiency of 13.34%. This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.

Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays

“…The paper by Bryan Tam et al describes a new way to produce high resolution OLED using close space sublimation [4] . The paper by Xiangwei Qu and Xiaowei Sun [5] , as well as the paper by Depeng Li et al [6] review and report the development in quantum dot based QLEDs. Another important organic-inorganic hybrid material that is gaining attention is perovskite.…”