High performance AlGaAs/GaAs quantum well MODFETs grown by chemical beam epitaxy

Kempter, Richard; Rothfritz, H.; Plauth, Johannes; Müller, R.; Tränkle, G.; Weimann, G.

doi:10.1049/el:19920732

Cited by 5 publications

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“…A self-assembled method of growing quantum wires of GaAs was found accidentally during the growth of AlGaAs on structured surfaces [151][152][153]. In the process of growing AlGaAs on lithographically etched surfaces, the different sticking coefficient and the mobility of surface atoms during crystal growth result in a concentration buildup of GaAs at the intersection of certain facets of AlGaAs.…”

Section: Quantum Wires Of Gaasmentioning

confidence: 99%

Nanoscience and nanotechnology in Europe

Tolles¹

1996

Nanotechnology

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During six months from April to September 1994, the author visited 42 laboratories in eight different European countries involved with research in nanostructures. The scientific thrusts point the way to new methods and properties of matter that may provide useful information. The potential applications of research in this field are likely to be found in information technology, sensors, and new materials, replete with the implications for many industrial interests. It is a suitable topic for the recently introduced 'focused technical assessment' activities of the Office of Naval Research Europe where the coordination for this effort was focused. Overviews of multidisciplinary efforts in fields of physics, electrical engineering, materials, chemistry, and biology are presented.

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Section: Quantum Wires Of Gaasmentioning

confidence: 99%

Nanoscience and nanotechnology in Europe

Tolles¹

1996

Nanotechnology

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Modulation Doped Fets

Morkoç̌

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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The sections in this article are Analytical Description of Modulation Doped Field Effect Transistors Power Modeling Processing Channel Design Modfet Performance AIGaN/GaN Modfets Si 1− x Ge x Modfet Structures Conclusion Acknowledgments

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Modulation Doped FETs

Liu

Morkoç̌

2005

Encyclopedia of RF and Microwave Engineering

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Operation and technology of conventional and pseudomorphic modulation‐doped field‐effect transistors (MODFET s) based on conventional semiconductors, SiGe/Si heterostructures, and recently popularized III–V nitride semiconductors are treated. While conventional AlGaAs/GaAs MODFET represent the genesis of these highly successful devices, pseudomorphic MODFET s (PMODFET s) exhibit additional degrees of freedom in the choice of channel composition. This added degree of freedom has led to device structures that can be tailored to a particular application with significant improvement in performance. Experiments carried out with AlGaAs/InGaAs/GaAs and InAlAs/InGaAs/InP PMODFET s demonstrate that these devices are superior to their counterparts with lattice‐matched channels. MODFET s with unprecedented performance, for instance, with a power gain of 7.3 dB at 140 GHz and a noise level of 1.4 dB in the 90‐GHz range, are described. The advent of high‐quality SiGe layers on Si substrates has paved the way to the exploration and exploitation of heterostructure devices in a Si environment. MODFET s based on the Si/SiGe have been achieved with extraordinary p‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz. Finally, owing to their large bandgaps, large high field electron velocity, large breakdown fields, large thermal conductivity, and robustness, wide‐bandgap nitride semiconductors have paved the way to AlGaN/GaN MODFET s with superior power performance. CW power levels of about 6 W have been achieved at 10 GHz in devices with 1 mm gate periphery that are comparable to power densities extrapolated from smaller devices. When four of these devices were power combined in a single‐stage amplifier, a CW output power of 22.9 W with a power‐added efficiency of 37% was demonstrated at 9 GHz. On the noise figure front, a minimum noise figure for a 1‐mm device of 0.85 dB with an associated gain of 11 dB at 10 GHz was obtained.

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High performance AlGaAs/GaAs quantum well MODFETs grown by chemical beam epitaxy

Cited by 5 publications

References 0 publications

Nanoscience and nanotechnology in Europe

Nanoscience and nanotechnology in Europe

Modulation Doped Fets

Modulation Doped FETs

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