Wiley Encyclopedia of Electrical and Electronics Engineering 1999
DOI: 10.1002/047134608x.w3149
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Modulation Doped Fets

Abstract: The sections in this article are Analytical Description of Modulation Doped Field Effect Transistors Power Modeling Processing Channel Design Modfet Performance AIGaN/GaN Modfets Si 1− x Ge … Show more

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Cited by 2 publications
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“…Among this complex reaction space, the ZnO nanoshells represent the most interesting observed product based on the technological value of this material and the difficulty of forming it under near-neutral aqueous conditions, as has been achieved here. In addition to the above TEM and DLS data, poly deoxythymidine-based DNA templating of ZnO crystallization is also supported by the closely matched spacing that occurs between adjacent DNA bases in a given oligomer (0.34 nm) and the a lattice constant (corresponding to the Zn–Zn spacing) in the basal plane of wurzite ZnO (0.325 nm) . Additionally, the positioning of nucleobase ligands has been shown important toward achieving ordered DNA–metal complexes .…”
Section: Resultsmentioning
confidence: 72%
“…Among this complex reaction space, the ZnO nanoshells represent the most interesting observed product based on the technological value of this material and the difficulty of forming it under near-neutral aqueous conditions, as has been achieved here. In addition to the above TEM and DLS data, poly deoxythymidine-based DNA templating of ZnO crystallization is also supported by the closely matched spacing that occurs between adjacent DNA bases in a given oligomer (0.34 nm) and the a lattice constant (corresponding to the Zn–Zn spacing) in the basal plane of wurzite ZnO (0.325 nm) . Additionally, the positioning of nucleobase ligands has been shown important toward achieving ordered DNA–metal complexes .…”
Section: Resultsmentioning
confidence: 72%
“…Much less is known about group IV nitride semiconductor applications, where most research to date has been directed to group IIIA compounds (i.e., AlN, InN, GaN) for solid-state lighting and high-power electronics . Among the few rare examples, (Sn,Ge,Si) 3 N 4 alloys with experimentally determined spinel crystal structures , have been theoretically proposed for the use in light-emitting diodes based on the tunable band gap values .…”
Section: Introductionmentioning
confidence: 99%