High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor

“…This material is utilized in the 12SOI process for compressively straining pFET channels, therefore, increasing the hole mobility. 14,15 The optical mode and the cross section of the photodetector are shown in Fig. 1(a).…”