High‐Performance 2D Rhenium Disulfide (ReS<sub>2</sub>) Transistors and Photodetectors by Oxygen Plasma Treatment

Shim, Jaewoo; Oh, Aely; Kang, Do Hyung; Oh, Seyong; Jang, Sung Kyu; Jeon, Jae Heung; Jeon, Min Hwan; Kim, Minwoo; Choi, Changhwan; Lee, Jaehyeong; Lee, Sungjoo; Yeom, Geun Young; Song, Young Jae; Park, Jin‐Hong

doi:10.1002/adma.201601002

Cited by 219 publications

(192 citation statements)

References 41 publications

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“…In addition, the other important optoelectronic parameters,38, 39, 40 such as detectivity and external quantum efficiency, were also extracted from the photodetectors fabricated on the ReS 2 , ReSe 2 , and ReS 2 /ReSe 2 heterojunctions; the plotted data is provided in the Supporting Information chapter (Figure S5, Supporting Information). Finally, for performance comparison of the gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector with other devices, we plotted the photoresponsivity values obtained in this study and previous studies for vdW photodetectors4, 5, 6, 7, 8, 9, 10, 11, 13, 23, 41, 42, 43 in Figure 4k. Our gate‐controllable ReS 2 /ReSe 2 heterojunction photodetector (blue dotted line) exhibited relatively high photoresponsivity values over a broad range of wavelengths, compared to other vdW photodetectors.…”

Section: Resultsmentioning

confidence: 97%

“…Since the graphene photodetector was first implemented in 2009,1 various van der Waals (vdW) materials, such as graphene,1, 2, 3, 4 transition metal dichalcogenides (TMDs),5, 6, 7, 8, 9, 10, 11, 12 and black phosphorus (BP),13, 14, 15 have been utilized to achieve high‐performance photodetectors with high photoresponsivity and a wide detection range. In the early graphene‐based photodetectors, photodetection in a wide range from ultraviolet to terahertz wavelengths was possible, owing to the zero‐bandgap nature of graphene 16.…”

Section: Introductionmentioning

confidence: 99%

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Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Lee

Shim

et al. 2018

Advanced Science

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In recent years, various van der Waals (vdW) materials have been used in implementing high‐performance photodetectors with high photoresponsivity over a wide detection range. However, in most studies reported so far, photodetection in the infrared (IR) region has not been achieved successfully. Although several vdW materials with narrow bandgaps have been proposed for IR detection, the devices based on these materials exhibit notably low photoresponsivity under IR light illumination. Here, highly efficient near‐infrared (NIR) photodetection based on the interlayer optical transition phenomenon in a vdW heterojunction structure consisting of ReS2 and ReSe2 is demonstrated. In addition, by applying the gate‐control function to the two‐terminal vdW heterojunction photodetector, the photoresponsivity is enhanced to 3.64 × 105 A W−1 at λ = 980 nm and 1.58 × 105 A W−1 at λ = 1310 nm. Compared to the values reported for previous vdW photodetectors, these results are the highest levels of photoresponsivity in the NIR range. The study offers a novel device platform for achieving high‐performance IR photodetectors.

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Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Lee

Shim

et al. 2018

Advanced Science

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“…Most photodetectors were modulated by the applied gate voltage and temperature 85, 176, 177, 178, 188. However, other tuning methods, such as by intercalation or atmosphere, can also enhance the physical properties of the host materials to enhance the optoelectronic performance 14.…”

Section: Applications For 2d Optoelectronic and Electronic Devicesmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

et al. 2017

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With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

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“…To explore the effects of oxygen incorporation, samples were annealed in air following the procedure reported for ReS 2 , 61 but no changes were observed in the Raman spectra. Small changes in the lower-frequency ReS 2 phonons were reported after exposure to O 2 plasma, 62 but this was coupled with the appearance of ReO 3 in XPS spectra, rather than substitutional oxygen.…”

Section: Methodsmentioning

confidence: 99%

Identifying light impurities in transition metal dichalcogenides: the local vibrational modes of S and O in ReSe2 and MoSe2

et al. 2017

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The transition metal dichalcogenides provide a rich field for the study of two-dimensional materials, with metals, semiconductors, superconductors and charge density wave materials being known. Members of this family are typically hexagonal, but those based on rhenium (ReSe 2 and ReS 2 ) and their ternary alloys are attracting attention due to their triclinic structure and their resulting, strong in-plane anisotropy. Here, Raman spectra of dilute ReSe 2 -x S x alloys containing low levels of sulfur (x ≤ 0.25) were obtained in order to investigate the distribution of substitutional sulfur atoms over the non-equivalent chalcogen sites of the ReSe 2 unit cell. Four different Raman bands arising from the local vibrational modes of sulfur atoms were observed, corresponding to these four sites. One local vibrational mode has a substantially in-plane displacement of the sulfur atom, two are partially out-of-plane and one is completely out-of-plane. The interpretation of the experimental data is based on calculations of the lattice dynamics and nonresonant Raman tensors of a model alloy via density functional theory. For comparison, polarization-dependent Raman spectra of pure ReS 2 are also presented; a dramatic increase in the Raman cross-section is found for the out-of-plane modes when the excitation polarization is normal to the layers and the light propagates in the layer plane. A similar increase in cross-section is found experimentally for the local vibrational modes of sulfur in dilute ReSe 2 -x S x alloys and is predicted for dilute sulfur-containing alloys based on MoSe 2 . The analogous local vibrational modes of substitutional oxygen impurities in ReSe 2 were also investigated computationally.

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High‐Performance 2D Rhenium Disulfide (ReS₂) Transistors and Photodetectors by Oxygen Plasma Treatment

Cited by 219 publications

References 41 publications

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Identifying light impurities in transition metal dichalcogenides: the local vibrational modes of S and O in ReSe2 and MoSe2

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High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

Cited by 219 publications

References 41 publications

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Identifying light impurities in transition metal dichalcogenides: the local vibrational modes of S and O in ReSe2 and MoSe2

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High‐Performance 2D Rhenium Disulfide (ReS₂) Transistors and Photodetectors by Oxygen Plasma Treatment